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Electrical fingerprint of pipeline defects

机译：管道缺陷的电子指纹

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摘要

Pipeline defects are dislocations that connect the source region of the transistor with the drain region. They were widely reported to occur in CMOS, BiCMOS devices and recently in SOI technologies. They can reduce device yield either by affecting the devices functionality or by increasing the current consumption under stand-by conditions. In this work the electrical fingerprint of these dislocations is studied, its purpose is to enable us to identify these defects as the ones responsible for device failure. It is shown that the pipeline defects are responsible for a leakage current from source to drain in the transistors. This leakage has a resistive characteristic and it is lightly modulated by the body bias. It is not sensitive to temperature; vice versa the off-current of a good transistor exhibits the well-known exponential dependence on 1/T. The emission spectrum of these defects was studied and compared with the spectrum of a good transistor. The paper aims to show that the spectrum of a defective transistor is quite peculiar; it shows well defined peaks, whereas the spectrum of a good transistor under saturation conditions is characterized by a broad spectral light emission distribution. Finally the deep-level transient spectroscopy (DLTS) is tried on defective diodes.
机译：管线缺陷是将晶体管的源极区与漏极区连接的位错。据广泛报道，它们出现在CMOS，BiCMOS器件以及最近的SOI技术中。它们可以通过影响设备功能或通过增加待机条件下的电流消耗来降低设备良率。在这项工作中，研究了这些位错的电指纹，其目的是使我们能够将这些缺陷识别为造成设备故障的原因。结果表明，流水线缺陷是造成晶体管中从源极到漏极泄漏电流的原因。该泄漏具有电阻特性，并且通过人体偏置对其进行了轻微调制。它对温度不敏感。反之亦然，良好晶体管的截止电流表现出众所周知的对1 / T的指数依赖性。研究了这些缺陷的发射光谱，并将其与良好晶体管的光谱进行比较。本文的目的是证明有缺陷的晶体管的频谱非常特殊。它显示出定义良好的峰，而饱和条件下良好晶体管的光谱的特征是光谱发光分布宽。最后，尝试对有缺陷的二极管进行深层瞬态光谱分析（DLTS）。

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