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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Auger and XPS characterization of a multi layered Ti-Co-Si system for self aligned silicides purposes: a stoichiometry and chemical investigation
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Auger and XPS characterization of a multi layered Ti-Co-Si system for self aligned silicides purposes: a stoichiometry and chemical investigation

机译:用于自对准硅化物的多层Ti-Co-Si系统的俄歇和XPS表征:化学计量和化学研究

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摘要

Self-aligned silicides, as the Co-Si system for less than 0.13 μm applications, are still under investigation, due to some lack of their structural and basic characteristics knowledge. Due to oxygen contamination, originated by a number of possible sources, an outermost capping layer is required to ensure that no oxygen can easily enter the network, altering the thermodynamic properties of the film itself, when performing any thermal treatment. With this in mind, in this work we present an Auger electron spectroscopy (AES) and an X-ray photoelectron spectroscopy (XPS) investigation on a Ti-Co-Si layered system, thermally treated in the range 1023-1103 K, to evaluate the apparent stoichiometry and the chemical role of the components after making some RTP procedures. It turned out that the Ti cap layer has functioned as a good oxygen barrier diffusion at this temperature range, while part of the remaining Ti is present into the Co-Si matrix, having formed a ternary compound as Ti_(4.5) Si_(1.9) Co. Finally, in the Co silicide region a Si 2p3/2 peak shape variation ascribed to the silicide has been identified; this variation has been considered as a fingerprint of the compound itself.
机译:自对准硅化物作为小于0.13μm应用的Co-Si系统,由于缺乏结构和基本特性知识,目前仍在研究中。由于氧气污染源于多种可能的来源,因此需要最外层的覆盖层,以确保在进行任何热处理时,没有氧气能够轻易进入网络,从而改变了薄膜本身的热力学性质。考虑到这一点,在这项工作中,我们提出了对在1023-1103 K范围内进行热处理的Ti-Co-Si层系统的俄歇电子能谱(AES)和X射线光电子能谱(XPS)研究,以评估进行一些RTP程序后,组分的表观化学计量和化学作用。结果表明,Ti盖层在该温度范围内起良好的氧阻挡扩散作用,而剩余的一部分Ti存在于Co-Si基体中,形成三元化合物Ti_(4.5)Si_(1.9)最终,在硅化钴区域中,已经确定了归因于硅化物的Si 2p3 / 2峰形变化。这种变化被认为是化合物本身的指纹。

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