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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Time resolved CoSi_2 reaction in presence of Ti and TiN cap layers
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Time resolved CoSi_2 reaction in presence of Ti and TiN cap layers

机译:Ti和TiN盖层存在时的时间分辨CoSi_2反应

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In this work we study the phase transition of Co/poly-Si layers capped with Ti or TiN films. Silicide reaction has been performed by isothermal annealing in the temperature range between 420 and 510℃ and studied by measuring the sheet resistance during time. The time interval associated to the CoSi-CoSi_2 phase transition has been extracted as a function of the cap layer and the annealing temperature. The presence of the Ti cap systematically reduces the rate of CoSi_2 formation with respect to the sample with TiN. It has been found that the cap type has an impact on the pre-exponential factor of the growth time but it does not affect the activation energy. As an effect, the silicide capped with Ti has a flat interface with the substrate.
机译:在这项工作中,我们研究了用Ti或TiN薄膜覆盖的Co / poly-Si层的相变。硅化物反应是通过在420至510℃的温度范围内进行等温退火进行的,并通过测量一段时间内的薄层电阻进行了研究。已根据覆盖层和退火温度提取了与CoSi-CoSi_2相变相关的时间间隔。相对于带有TiN的样品,Ti盖的存在会系统地降低CoSi_2的形成速率。已经发现,帽盖类型对生长时间的指数前因子有影响,但是不影响活化能。结果,被Ti覆盖的硅化物与衬底具有平坦的界面。

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