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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >New DUV resist characterisation: stability to MB SEMI F21-95 contaminants
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New DUV resist characterisation: stability to MB SEMI F21-95 contaminants

机译：新的DUV抗蚀剂特性：对MB SEMI F21-95污染物具有稳定性

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Airborne molecular contamination (AMC) effects reveal to be more and more prominent in clean room manufacturing areas, shrinking the dimensions of electronic circuits such as the last generation of flash memory devices (0.15-0.13 μm). This work enabled us to evaluate new resist stabil ity to specific airborne contamination class in critical conditions; that is basic contamination of clean room environments (～ 20 ppb), higher than a typical contamination status inside Deep UV equipment chambers (～2 ppb). Formation of the so-called T-Topping (see Fig. 1) was observed, qualitatively discussed and quantitatively measured, facilitating comparison between experimental data on a time scale basis and a theoretical model developed for interpret contaminants adsorption on ultra clean surfaces; then we interpolated critical data between 1 and 5 min to gather information on process material characterization. The starting adsorption shift rate revealed to be 12 nm/min, showing that T-Topping is an almost instantaneous phenomena and that 2 min are sufficient to obtain CD values higher than specification limits in the experimental conditions. Finally, we calculated the resist characterization parameter (max shift rate per ppbV of airborne basis concentration) on a pure theoretical basis (0.637 nm/min/ppbV) resulting in a very good agreement with literature [D. Kinkead, W. Goodwin, K., MICRO 18(9) (2000) 71-84].
机译：空气传播的分子污染（AMC）效应在洁净室制造领域越来越显着，从而缩小了电子电路的尺寸，例如上一代闪存设备（0.15-0.13μm）。这项工作使我们能够在关键条件下评估针对特定空气传播污染等级的新抗蚀剂稳定性；这是洁净室环境的基本污染（〜20 ppb），高于深紫外设备室内的典型污染状态（〜2 ppb）。观察，定性地讨论并定量测量了所谓的T-Topping的形成（见图1），这有助于在时间尺度上比较实验数据和为解释污染物在超净表面上吸附而建立的理论模型之间的比较。然后我们在1至5分钟之间插入关键数据，以收集有关工艺材料表征的信息。起始吸附位移速率显示为12 nm / min，表明T-Topping几乎是瞬时现象，在实验条件下2分钟足以获得高于规格极限的CD值。最后，我们在纯理论基础上（0.637 nm / min / ppbV）计算了抗蚀剂的表征参数（每ppbV空气基准浓度的最大移动速率），从而与文献[D. Kinkead，W.Goodwin，K.，MICRO 18（9）（2000）71-84]。

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