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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >The interaction between Xe and F in Si (100) pre-amorphised with 20 keV Xe and implanted with low energy BF_2
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The interaction between Xe and F in Si (100) pre-amorphised with 20 keV Xe and implanted with low energy BF_2

机译：Xe和F在Si（100）中被20 keV Xe预非晶化并注入低能BF_2时的相互作用

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摘要

The pre-amorphisation of Si by Xe~+ ions, before source/drain and extension implants, is an attractive alternative to Ge~+ or Si~+, as it produces sharper amorphous/crystalline interfaces. Si(100) samples pre-amorphised with 20 keV Xe~+ to a nominal dose of 2E14 cm~(-2) were implanted with 1 and 3 keV BF_2~+ to doses of 7E14cm~(-2). Samples were annealed at temperatures ranging from 600 to 1130℃ and investigated by medium energy ion scattering (MEIS) and secondary ion mass spectrometry (SIMS). Following annealing, it was observed that implanted Xe has interacted with F originating from the BF_2~+ implant. MEIS studies showed that for all annealing conditions, approximately half of the Xe accumulated at depths of 7 nm for the 1 keV and at 13 nm for the 3 keV BF_2~+ implant. This equates to the end of range of B and F within the amorphous Si. SIMS showed that in the pre-amorphised samples, approximately 10% of the F migrates into the bulk and is trapped al the same depth in a ～ 1:1 ratio to Xe. A small fraction of the implanted B is also trapped. The effect is interpreted in terms of the formation of a defect structure within the amorphised Si, leading to F stabilised Xe bubble or XeF compound formation.
机译：在源/漏和扩展注入之前，通过Xe〜+离子对Si进行预非晶化是Ge〜+或Si〜+的一种有吸引力的替代选择，因为它会产生更尖锐的非晶/晶体界面。将用20 keV Xe〜+预非晶化至标称剂量2E14 cm〜（-2）的Si（100）样品注入1和3 keV BF_2〜+至7E14cm〜（-2）的剂量。样品在600至1130℃的温度范围内进行退火，并通过中能离子散射（MEIS）和二次离子质谱（SIMS）进行研究。退火后，观察到植入的Xe与源自BF_2 +植入物的F相互作用。 MEIS研究表明，在所有退火条件下，大约1％的Xe在1 keV的7 nm深度处积累，而在3 keV BF_2 +注入在13 nm处积累。这等于非晶硅中B和F范围的终点。 SIMS表明，在预非晶化的样品中，大约10％的F迁移到主体中，并以与Xe约1：1的比率被困在相同的深度。植入的B的一小部分也被捕获。用非晶硅内缺陷结构的形成来解释该效应，导致形成F稳定的Xe气泡或XeF化合物。

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