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Low K dielectrics in sintered Al-Zr oxide composites processed by thermal plasma heating

机译:热等离子体加热处理的烧结Al-Zr氧化物复合材料中的低K电介质

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摘要

A simple and low cost heating technique based on extended arc thermal plasma heating (EATPH) source has been developed to sinter high temperature Al_x-Zr_(100-x) (x = 0, 10, 20, ..., 100) oxides. Structure and morphology of sintered Al-Zr oxide samples were studied by X-ray diffraction (XRD) and scanning electron microscope (SEM). Interesting result pertaining to the reduction of dielectric constant (K) and dielectric loss (tanδ) were noted in thermal plasma sintered specimen as compared to the conventional sintered sample using resistive heating, It is observed that values of K are reduced up to 40% (maximum) w.r.t. Conventional sintering. This low K behavior observed in thermal plasma sintered sample may be attributed to the incorporation of dynamic inclusion in different defect form during thermal plasma heating within a short sintering time. It is also further observed from the frequency and temperature variation of K and tanδ that surface charge polarization along with dipole screening play an important role at high frequencies and temperatures which can be explained by dipole pinning and depinning mechanisms.
机译:已经开发了一种基于扩展电弧热等离子体加热(EATPH)源的简单且低成本的加热技术,以烧结高温Al_x-Zr_(100-x)(x = 0、10、20,...,100)氧化物。通过X射线衍射(XRD)和扫描电子显微镜(SEM)研究了烧结Al-Zr氧化物样品的结构和形貌。与使用电阻加热的常规烧结样品相比,热等离子体烧结样品中发现了与介电常数(K)和介电损耗(tanδ)降低有关的有趣结果,可以观察到K值降低了40%(最大)wrt常规烧结。在热等离子体烧结的样品中观察到的这种低K行为可归因于在短时间的烧结时间内在热等离子体加热期间以不同缺陷形式掺入了动态夹杂物。从K和tanδ的频率和温度变化还可以进一步观察到,表面电荷极化和偶极子屏蔽在高频和高温下起着重要作用,这可以用偶极子固定和去固定机制来解释。

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