Space growth studies of Ce-doped Bi12SiO20 single crystal

Y.F. Zhou; J.C. Wang; L.A. Tang

首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Space growth studies of Ce-doped Bi12SiO20 single crystal

【24h】

Space growth studies of Ce-doped Bi12SiO20 single crystal

机译：Ce掺杂Bi12SiO20单晶的空间生长研究

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Ce-doped Bi12SiO2o (BSO) single crystal was grown on board of the Chinese Spacecraft-Shenzhou No. 3. A cylindrical crystal, 10 mm in diameter and 40 mm in length, was obtained. The morphology of crystals is significantly different for ground- and space-grown portions. The space- and ground-grown crystals have been characterized by Ce concentration distribution, X-ray rocking curve absoiption spectrum and micro-Raman spectrum. The results show that the quality of Ce-doped BSO crystal grown in space is more homogeneous and more perfect than that of ground grown one.

机译：掺铈的Bi12SiO2o（BSO）单晶生长在中国航天器-神舟3号的板上。获得了直径10 mm，长度40 mm的圆柱形晶体。地面和空间生长部分的晶体形态明显不同。通过Ce浓度分布，X射线摇摆曲线吸收光谱和微拉曼光谱表征了空间生长和地面生长的晶体。结果表明，在太空中生长的掺Ce的BSO晶体的质量比地面生长的晶体更均匀，更完美。

著录项

来源
《Materials Science and Engineering. B, Solid-State Materials for Advanced Technology》 |2004年第3期|p.179-183|共5页
作者
Y.F. Zhou; J.C. Wang; L.A. Tang;
展开▼
作者单位

Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, China;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类工程材料学;
关键词
Bridgman technique; Crystal growth; Bismuth compounds; Doping effects; Microgravity condition;

机译：布里奇曼技术;晶体生长;铋化合物;掺杂效应;微重力条件;

相似文献

外文文献
中文文献
专利

1. Crystal field studies in Eu3+ doped Bi12SiO20 and Bi12SiO20 : V5+ single crystals [J] . Cascales C., Fernandez J., Oleaga A., Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2001,第0期

机译：Eu3 +掺杂Bi12SiO20和Bi12SiO20：V5 +单晶的晶体场研究
2. GROWTH CRYSTALLOGRAPHY OF BI12SIO20 SINGLE CRYSTALS SOLIDIFIED BY A FLOATING ZONE METHOD [J] . Fu SL., Ozoe H. Journal of Materials Science . 1997,第14期

机译：浮动区法固溶的Bi12SIO20单晶的生长晶体学
3. The growth and optical properties of Bi12SiO20 single crystals [J] . Golubovi? Aleksandar V., Nikoli? Slobodanka N., Gaji? Rado?, Journal of the Serbian Chemical Society . 2002,第4期

机译：Bi12SiO20单晶的生长和光学性质
4. Defect Analysis of Ce-doped Bi12Sio20 Crystal in Space Growth [C] . . 2005

机译：Ce掺杂Bi12Sio20晶体在空间生长中的缺陷分析
5. Studies on crystal growth and property evaluation of cadmium oxalate single crystals. [D] . Tyagi, Babita. 2002

机译：草酸镉单晶的晶体生长及性能评价研究。
6. Atomic Structure of Luminescent Centers in High-Efficiency Ce-doped w-AlN Single Crystal [O] . Ryo Ishikawa, Andrew R. Lupini, Fumiyasu Oba, -1

机译：高效铈掺杂w-AlN单晶中发光中心的原子结构
7. Influence of microgravity on Ce-doped Bi12SiO20 crystal defect [O] . Y F Zhou, J Y Xu, Y Liu, 2006

机译：微重力对Ce掺杂Bi12siO20晶体缺陷的影响
8. Identification and Control of Gravity Related Defect Formation During Melt Growth of Electro-Optic Single Crystals Bismuth Silicate(Bi12SiO20) [R] . Becia, Piotr, Wiegel, Michaela E. K. 2004

机译：电光单晶硅酸铋（Bi12siO20）熔体生长过程中重力相关缺陷形成的识别与控制

Space growth studies of Ce-doped Bi12SiO20 single crystal

摘要

著录项

相似文献

相关主题

期刊订阅