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Dopants and induced residual stress-controlled thermoelectric properties of ZnO thin films

机译：掺杂剂和诱导ZnO薄膜的残余应激控制热电性能

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摘要

We investigate the structure, optical properties, and thermoelectric power in terms of residual stresses induced in the undoped ZnO and X-doped ZnO (X = Al, Ga) films. The results show that the different native seed layers self-grown during the initial growth cause compressive stress for ZnO and Ga-doped ZnO films and tensile stress for Al-doped ZnO films. The band-gap of the investigated films follows the Burstein-Moss (BM) effect. It is noted that the ZnO film with the lowest compressive stress has a better PF value below 275 °C. The GZO film is more stable at higher temperatures; therefore, it has a better PF value above 275 °C. The residual stress induced in the investigated films is demonstrated through the formation of a self-grown seed layer under the bombardment of high-energy sputtered Ga, Al, Zn, and O species onto the substrate and during film growth.
机译：我们研究了在未掺杂的ZnO和X掺杂ZnO（X = Al，Ga）膜中诱导的残余应力方面的结构，光学性质和热电力。结果表明，在初始生长期间自生物自生物的不同天然种子层导致ZnO和Ga掺杂的ZnO膜的压缩应力和用于Al掺杂的ZnO膜的拉伸应力。研究的薄膜的带隙遵循Burstein-MOS（BM）效应。应注意，具有最低压缩应力的ZnO膜具有更好的PF值低于275°C。 GZO薄膜在较高温度下更稳定;因此，它具有更好的PF值，高于275°C。通过在高能溅射的Ga，Al，Zn和O物种的轰击下形成自生种子层在基材上和薄膜生长期间，通过形成自生种子层来证明所研究的残留应激。

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  • 来源
    《Materials Science and Engineering》 |2020年第11期|114712.1-114712.7|共7页
  • 作者

    Anh Tuan Thanh Pham; Phuong Thanh Ngoc Vo; Hanh Kieu Thi Ta; Ngoc Kim Pham; Hoa Thi Lai; Hoa Nhu Thi Tran; Vinh Cao Tran; Tan Le Hoang Doan; Sungkyun Park; Thang Bach Phan;

  • 作者单位

    Laboratory of Advanced Materials University of Science HoChiMinh City Viet Nam Vietnam National University HoChiMinh City Viet Nam;

    Laboratory of Advanced Materials University of Science HoChiMinh City Viet Nam Vietnam National University HoChiMinh City Viet Nam Faculty of Materials Science and Technology University of Science HoChiMinh City Viet Nam;

    Vietnam National University HoChiMinh City Viet Nam Faculty of Materials Science and Technology University of Science HoChiMinh City Viet Nam Center for Innovative Materials and Architectures (INOMAR) HoChiMinh City Viet Nam;

    Vietnam National University HoChiMinh City Viet Nam Faculty of Materials Science and Technology University of Science HoChiMinh City Viet Nam Center for Innovative Materials and Architectures (INOMAR) HoChiMinh City Viet Nam;

    Vietnam National University HoChiMinh City Viet Nam Center for Innovative Materials and Architectures (INOMAR) HoChiMinh City Viet Nam;

    Vietnam National University HoChiMinh City Viet Nam Faculty of Materials Science and Technology University of Science HoChiMinh City Viet Nam;

    Laboratory of Advanced Materials University of Science HoChiMinh City Viet Nam Vietnam National University HoChiMinh City Viet Nam;

    Vietnam National University HoChiMinh City Viet Nam Center for Innovative Materials and Architectures (INOMAR) HoChiMinh City Viet Nam;

    Department of Physics Pusan National University Busan 46241 Republic of Korea;

    Laboratory of Advanced Materials University of Science HoChiMinh City Viet Nam Vietnam National University HoChiMinh City Viet Nam Center for Innovative Materials and Architectures (INOMAR) HoChiMinh City Viet Nam;

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  • 正文语种 eng
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  • 关键词

    Residual stress; Self-grown seed layer; X-doped ZnO thin films (X = Ga Al); Power factor; Sputtering;

    机译：残余压力;自生种子层;X掺杂的ZnO薄膜（x = Ga Al）;功率因数;溅射;

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