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首页> 外文期刊>Materials Science and Engineering >Post oxidation in improving the Schottky-gate MgZnO/ZnO heterojunction field-effect transistors fabricated by RF sputtering
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Post oxidation in improving the Schottky-gate MgZnO/ZnO heterojunction field-effect transistors fabricated by RF sputtering

机译：氧化后改善肖特基栅MGZNO / ZnO异质结场效应晶体管由射频溅射制造的

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Post-oxidation was employed to improve the performance of Schottky-gate MgZnO/ZnO heterojunction field-effect transistors (SG-HFETs), which were fabricated using radio-frequency magnetron sputtering system. For SG-HFETs without post-oxidation, a non-saturation drain-source current (I_(DS)) was observed and the SG-HFETs were difficult to be pinched off, resulting in a much low I_(ON)/I_(OFF) (2.94) and much high threshold voltage V_(TH) (-76 V). However, in case of SG-HFETs with post-oxidation, a saturation I_(DS) was achieved, leading to a high I_(ON)/ I_(OFF) ratio (264) and low V_(TH) (-8 V). In SG-HFETs without post-oxidation, the interface states (D_(it)) and the trap states in the channel layer (N_t) were 1.1 × 10~(13) cm~(-2) and 3.7 × 10~(17) cm~(-3), respectively, which decreased the channel field-effect mobility (μ_(FE)) to 0.103 cm~2/V-s. However after post-oxidation, the D_(it) and N_t were decreased to 1.08 × 10~(12) cm~(-2) and 3.7 × 10~(16) cm~(-3), respectively, enhancing the μ_(FE) to 0.42 cm~2/V-s. X-ray photoelectron spectroscopy revealed that amounts of oxygen vacancy-related defects existed on the MgZnO surface and at the MgZnO/ZnO interface in the SG-HFETs without post-oxidation. However, after post-oxidation, these defects were greatly suppressed and an extremely stable MgO layer passivated the MgZnO surface, largely reducing the leakage current and the threshold voltage in the SG-HFETs.
机译：使用后氧化以改善使用射频磁控溅射系统制造的肖特基栅MGZNO / ZnO异质结场效应晶体管（SG-HFET）的性能。对于没有后氧化后的SG-HFET，观察到非饱和漏极源电流（I_（DS）），并且难以挤出SG-HFET，导致低于I_（ON）/ I_（OFF） ）（2.94）和高阈值电压V_（TH）（-76 V）。然而，在具有后氧化后的SG-HFET的情况下，实现了饱和I_（DS），导致高I_（ON）/ I_（OFF）比率（264）和低V_（TH）（-8 v） 。在没有氧化后的SG-HFET中，界面状态（D_（IT））和沟道层（N_T）中的陷阱状态为1.1×10〜（13）cm〜（-2）和3.7×10〜（17 ）CM〜（-3）分别降低了频道场效应迁移率（μ_（Fe））至0.103cm〜2 / Vs。然而，在后氧化后，D_（IT）和N_T分别降低至1.08×10〜（12）cm〜（-2）和3.7×10〜（16）cm〜（-3），增强μ_（ Fe）至0.42厘米〜2 / vs。 X射线光电子能谱显示，在MgZNO表面和SG-HFET中的MgZnO / ZnO界面上存在氧空位相关缺陷的量，而不会氧化。然而，在后氧化后，大大抑制了这些缺陷，并且极其稳定的MgO层钝化了MgZNO表面，大部分降低了SG-HFET中的漏电流和阈值电压。

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