首页> 外文期刊>Materials Science and Engineering >Tin-manganese-nickel oxide thin films prepared by thermal evaporation for photosensor applications
【24h】

Tin-manganese-nickel oxide thin films prepared by thermal evaporation for photosensor applications

机译:通过热蒸发为光电传感器应用制备的锡锰 - 氧化镍薄膜

获取原文
获取原文并翻译 | 示例
           

摘要

This study reports the synthesis and characterization of non-stoichiometric nanocrystalline Tin-Manganese-Nickel (Sn-Mn-Ni) oxide thin films prepared by thermal evaporation for photosensor applications. The photo-conductive characteristics were investigated by fabricating a sandwich-structure device of p~+-Si-substrate/Sn-Mn-Ni-oxide-thin-film/indium-tin-oxide (ITO). Results show that Sn_(37)Mn_(10)Ni_(53)O_x thin films exhibit an absorption coefficient of 1.15 × 10~6 cm~(-1) in visible light spectrum. In additions, the device characteristics including a high responsivity (R_(res)) of 11.5 A/W, and the fast photo-response with a rise time (t_r) of 41.2 ms and a fall time (t_f) of 41.6 ms measured at 1.0 V bias and 460 nm wavelength were obtained. Hence, the Sn_(37)Mn_(10)Ni_(53)O_x thin film is favorable for potential photosensor applications in visible light spectrum.
机译:本研究报告了通过热蒸发为光电传感器应用制备的非化学计量纳米晶锡锰镍(Sn-Mn-Ni)氧化薄膜的合成和表征。 通过制造P + -SI-基板/ Sn-Mn-Ni-氧化物薄膜/铟 - 氧化铟锡(ITO)的夹心结构装置来研究光导特性。 结果表明,SN_(37)MN_(10)Ni_(53)O_x薄膜在可见光光谱中表现出1.15×10〜6cm〜(-1)的吸收系数。 另外,包括11.5A / W的高响应度(R_(RE))的装置特性,以及具有41.2ms的上升时间(T_R)的快速光响应和41.6ms的下降时间(T_F) 获得1.0V偏差和460nm波长。 因此,SN_(37)MN_(10)NI_(53)O_X薄膜有利于可见光光谱中的潜在光电传感器应用。

著录项

  • 来源
    《Materials Science and Engineering》 |2021年第6期|115126.1-115126.8|共8页
  • 作者单位

    Department of Materials Science and Engineering National Tsing Hua University 101 Sec. 2 Kuang-Fu Road Hsinchu 30013 Taiwan;

    Department of Materials Science and Engineering National Tsing Hua University 101 Sec. 2 Kuang-Fu Road Hsinchu 30013 Taiwan;

    Department of Materials Science and Engineering National Tsing Hua University 101 Sec. 2 Kuang-Fu Road Hsinchu 30013 Taiwan;

    Department of Materials Science and Engineering National Tsing Hua University 101 Sec. 2 Kuang-Fu Road Hsinchu 30013 Taiwan;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Tin-manganese-nickel oxide; Sn-Mn-Ni oxide thin film; Metal oxides; Sandwich-structure device; Photosensors;

    机译:锡锰 - 氧化镍;Sn-Mn-Ni氧化物薄膜;金属氧化物;三明治结构装置;光电传感器;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号