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首页> 外文期刊>Materials Science and Engineering >Application of i-a-Si_(1-x)O_x∶H as i/n interface layer of a-Si_(1-x)Ge_x∶H single-junction flexible solar cell
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Application of i-a-Si_(1-x)O_x∶H as i/n interface layer of a-Si_(1-x)Ge_x∶H single-junction flexible solar cell

机译：应用I-A-Si_（1-x）o_x:h作为a-si_（1-x）ge_x：h单结的I / n接口层

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摘要

We investigated the effect of the flow rate of CO_2 on the optical and structural properties of i-a-Si_(1-x)O_x∶H films deposited using 27-MHz very-high-frequency plasma-enhanced chemical vapor deposition. Experimental results show that with an increasing CO_2 flow rate, the optical bandgap of the film was increased due to the increase of the oxygen concentration, while the transparent result showed a higher value than the conventional a-Si∶H material at long wavelength. This result indicated that the i-a-Si_(1-x)O_x∶H is suitable for an application to the i/n interface layer of an a-Si_(1-x)Ge_x∶H solar cell. The deposition conditions of the films were applied to the i/n interface layer of a-Si_(1-x)Ge_x∶H single-junction flexible solar cells. It was found that the conversion efficiency of a solar cell with an i-a-Si_(1-x)O_x∶H i/n interface layer showed a higher value due to the higher short circuit current density compared to a conventional a-Si∶H i/n interface layer. In addition, with the optimum conditions of the i-a-Si_(1-x)O_x∶H i/n interface layer, a conversion efficiency of 6.6% (V_(oc) = 0.81 V, J_(sc) = 14.6 mA/cm~2, and FF = 0.57) was achieved with a solar cell area of 1 × 1 cm~2.
机译：我们研究了CO_2流量对使用27-MHz非常高频率等离子体增强的化学气相沉积的I-A-Si_（1-x）O_xδm膜的光学和结构性能的影响。实验结果表明，随着CO_2流速的增加，由于氧浓度的增加，膜的光学带隙增加，而透明结果显示比在长波长下的常规A-Si：H材料更高的值。此结果表明I-A-Si_（1-x）O_x：H适用于A-Si_（1-x）Ge_x：H太阳能电池的I / N接口层的应用。将薄膜的沉积条件施加到A-Si_（1-x）Ge_x：H单结柔性太阳能电池的I / N接口层。结果发现，由于常规A-Si：H相比，具有IA-Si_（1-x）O_x：H I / N接口层的太阳能电池的转换效率显示出较高的电流密度。 I / N接口层。另外，在IA-Si_（1-x）O_x：H I / N接口层的最佳条件下，转换效率为6.6％（V_（OC）= 0.81 V，J_（SC）= 14.6 mA / cm使用1×1cm〜2的太阳能电池区域实现〜2和FF = 0.57）。

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  • 来源
    《Materials Science and Engineering》 |2021年第8期|115175.1-115175.5|共5页
  • 作者

    Sorapong Inthisang; Chanarong Piromjit; Taweewat Krajangsang; Aswin Hongsingthong; Kobsak Sriprapha;

  • 作者单位

    Division of Physics Faculty of Science Nakhon Phanom University Nakhon Phanom 48000 Thailand;

    Solar Energy Technology Laboratory (STL) National Electronics and Computer Technology Center (NECTEC) National Science and Technology Development Agency (NSTDA) 111 Phahon Yothin Rd. Klong 1 Klong Luang Pathumthani 12120 Thailand;

    Solar Energy Technology Laboratory (STL) National Electronics and Computer Technology Center (NECTEC) National Science and Technology Development Agency (NSTDA) 111 Phahon Yothin Rd. Klong 1 Klong Luang Pathumthani 12120 Thailand;

    Solar Energy Technology Laboratory (STL) National Electronics and Computer Technology Center (NECTEC) National Science and Technology Development Agency (NSTDA) 111 Phahon Yothin Rd. Klong 1 Klong Luang Pathumthani 12120 Thailand;

    Solar Energy Technology Laboratory (STL) National Electronics and Computer Technology Center (NECTEC) National Science and Technology Development Agency (NSTDA) 111 Phahon Yothin Rd. Klong 1 Klong Luang Pathumthani 12120 Thailand;

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  • 正文语种 eng
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  • 关键词

    Hydrogenated amorphous silicon oxide layer; Single-junction amorphous silicon germanium; solar cell; Flexible solar cell; p/i interface layer; i/n interface layer;

    机译：氢化非晶氧化硅层;单结非晶硅锗;太阳能电池;柔性太阳能电池;P / I接口层;I / N接口层;

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