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首页> 外文期刊>Materials Science and Engineering >Crystallographic and electro-optic analysis of pure and Cu/Mn-doped Cd_(0.6)Zn_(0.4)O ternary alloy: Role of the defect states and imperfection density
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Crystallographic and electro-optic analysis of pure and Cu/Mn-doped Cd_(0.6)Zn_(0.4)O ternary alloy: Role of the defect states and imperfection density

机译：纯和Cu / Mn掺杂CD_（0.6）Zn_（0.4）O三元合金的晶体和电光分析：缺陷状态和缺陷密度的作用

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摘要

Pure and Cu/Mn-doped Cd_(0.4)Zn_(0.6)O (0 ≤ x ≤ 1) ternary alloy is prepared by co-precipitation and further the variation of dopant concentration has been studied. The diffractogram of the undoped sample has peaks of both rocksalt (RS) CdO and wurtzite (WZ) ZnO phase. The individual and simultaneous doping of Cu and Mn elements has significantly altered the intensity, FWHM, and developments of defect states in Cd_(0.4)Zn_(0.6)O alloy. TEM microscope has investigated the crystalline size and interplanar spacing that is slightly decreased with dopant concentration which lies within the range ～ 38-30 nm. UV-Vis spectroscopy analyzed a decreasing trend in bandgap energy with dopant concentration. IN PL, the near band edge and deep trap state emission is observed at 382, 417, 448, 520 and 580 nm wavelengths. The resistivity, carrier concentration, and mobility are also computed which proposed that Cu/Mn-doped Cd_(0.4)Zn_(0.6)O alloy could be the better TCO with new opportunities for material science researchers.
机译：通过共沉淀制备纯和Cu / Mn掺杂的CD_（0.4）Zn_（0.6）o（0≤x≤1）三元合金，并研究了掺杂剂浓度的变化。未掺杂的样品的衍射线具有岩土（RS）CDO和紫零（WZ）ZnO相的峰。 Cu和Mn元件的个体和同时掺杂具有显着改变CD_（0.4）Zn_（0.6）O合金中缺陷状态的强度，FWHM和开发。 TEM显微镜研究了晶体尺寸和跨整个间隔，略微降低，掺杂剂浓度在〜38-30nm的范围内。 UV-Vis光谱分析具有掺杂剂浓度的带隙能量的降低趋势。在PL中，在382,417,448,520和580nm波长下观察到近带边缘和深阱状态发射。还计算了电阻率，载体浓度和迁移率，其提出了Cu / Mn掺杂的CD_（0.4）Zn_（0.6）O合金可以是具有新的材料科学研究人员的新机会。

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  • 来源
    《Materials Science and Engineering》 |2021年第8期|115214.1-115214.13|共13页
  • 作者

    Chitra Bhukkal; Rajni Vats; Bindiya Goswami; Neelam Rani; Rachna Ahlawat;

  • 作者单位

    Department of Physics Material Science Lab Chaudhary Devi Lai University Sirsa 125055 Haryana India;

    Department of Physics Material Science Lab Chaudhary Devi Lai University Sirsa 125055 Haryana India;

    Department of Physics Material Science Lab Chaudhary Devi Lai University Sirsa 125055 Haryana India;

    Department of Physics Material Science Lab Chaudhary Devi Lai University Sirsa 125055 Haryana India;

    Department of Physics Material Science Lab Chaudhary Devi Lai University Sirsa 125055 Haryana India;

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  • 正文语种 eng
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  • 关键词

    Cd_(0.4)Zn_(0.6)O alloy; Cu/Mn doping; XRD-FTIR; PL; Resistivity; Mobility; etc.;

    机译：CD_（0.4）Zn_（0.6）O合金;Cu / Mn掺杂;XRD-FTIR;PL;电阻率;移动性;等等。;

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