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首页> 外文期刊>Materials Science and Engineering >Reduction of efficiency droop by inserting superlattice quaternary-ternary electron blocking layer in GaN-based light-emitting diodes
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Reduction of efficiency droop by inserting superlattice quaternary-ternary electron blocking layer in GaN-based light-emitting diodes

机译：通过在GaN的发光二极管中插入超晶格四元零电子阻挡层来减少效率下垂

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摘要

We report a reduced the unwanted hole blocking of the electron blocking layer (EBL) by replacing the conventional EBL with a quaternary-ternary superlattice electron blocking layer. The effective barrier height for holes is reduced from ～ 348 meV to ～ 261 meV, thus, improving the concentration of holes by ～ 50％ with respect to LED with conventional EBL. Similarly, the radiative recombination rate is also improved by ～ 79％. As a result, the overall droop ratio of internal quantum efficiency (IQE) of the proposed LED is reduced to ～ 23％ at 100 A/cm~2 in comparison to conventional LED.
机译：通过用四元超晶格电子阻挡层替换传统的EBL，我们报告电子阻挡层（EBL）的不需要的空穴阻挡。 孔的有效屏障高度从〜348mEV降低至〜261meV，因此，相对于常规EBL的LED提高孔的浓度〜50％。 类似地，辐射重组率也得到〜79％。 结果，与常规LED相比，所提出的LED的内部量子效率（IQE）的整体下垂比在100A / cm〜2中降低至〜23％。

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  • 来源
    《Materials Science and Engineering》 |2021年第9期|115279.1-115279.4|共4页
  • 作者

    Abdur-Rehman Anwar; Muhammad Usman; Munaza Munsif; Kiran Saba;

  • 作者单位

    Faculty of Engineering Sciences Ghulam Ishaq Khan Institute of Engineering Sciences and Technology Topi 23460 Khyber Pakhtunkhwa Pakistan;

    Faculty of Engineering Sciences Ghulam Ishaq Khan Institute of Engineering Sciences and Technology Topi 23460 Khyber Pakhtunkhwa Pakistan;

    Faculty of Engineering Sciences Ghulam Ishaq Khan Institute of Engineering Sciences and Technology Topi 23460 Khyber Pakhtunkhwa Pakistan;

    Optoelectronic Devices Laboratory Institute of High-Pressure Physics Polish Academy of Sciences Sokolowska 29/37 01-142 Warsaw Poland;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    InGaN; Efficiency; Green;

    机译：ingan;效率;绿;

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