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首页> 外文期刊>Materials Science and Engineering >Improved chemical deposition of cobalt-doped CdS nanostructured thin films via nucleation-doping strategy: Surface and optical properties
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Improved chemical deposition of cobalt-doped CdS nanostructured thin films via nucleation-doping strategy: Surface and optical properties

机译：通过成核掺杂策略改善钴掺杂Cds纳米结构薄膜的化学沉积：表面和光学性质

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In the majority of the chemical deposition techniques used for doping thin films, dopant cations are usually added to the reaction simultaneously with the host cations, or even after the formation of the host matrix. This approach reduces the dopant efficiency and reproducibility of dopant-related properties. In the present work, the nucleation-doping strategy usually used for colloidal nanocrystals is extended into the chemical bath deposition technique to prepare cobalt-doped CdS nanostructured thin films. The Co:CdS thin films showed %2.5 doping yield with a root-mean-square roughness below 22 nm and absorption edge below 510 nm. The PL emission spectra of the films revealed two distinct peaks at 490 and 530 nm, attributed to the recombination processes through excitonic states and impurity levels, respectively. Almost all the experimental variables were optimized to reach a partially single-emission peak at 530 nm, which can prove the successful incorporation of Co ions into CdS nanostructures.
机译：在用于掺杂薄膜的大部分化学沉积技术中，通常将掺杂剂阳离子与宿主阳离子同时加入反应中，或甚至在形成宿主基质之后。这种方法降低了掺杂剂相关性质的掺杂剂效率和再现性。在本作工作中，通常用于胶体纳米晶体的成核掺杂策略延伸到化学浴沉积技术中以制备掺杂钴的Cds纳米结构薄膜。 CDS薄膜显示％2.5掺杂产率，其根平均方粗糙度低于22nm，吸收边缘低于510nm。薄膜的PL发射光谱揭示了490和530nm处的两个不同的峰，分别通过喷发性状态和杂质水平归因于重组过程。几乎所有实验变量都经过优化以在530nm处达到部分单发射峰，这可以证明将Co离子的成功掺入CDS纳米结构中。

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