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Strain e ffects in low-dimensional transition metal oxides

机译：低维过渡金属氧化物的应变效应

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摘要

Transition metal oxides offer a wide spectrum of properties which provide the foundation for a broad range of potential applications. Many of these properties originate from intrinsic coupling between lattice deformation and nanoscale electronic and magnetic ordering. Lattice strain thus has a profound influence on the electrical, optical, and magnetic properties of these materials. Recent advances in materials processing have led to the synthesis of low-dimensional single-crystal transition metal oxides, namely, epitaxial ultra-thin films and free-standing nano/microwires. Unlike bulk materials, these systems allow external tuning of uniform strain in these materials to tailor their properties and functionalities.rnThis paper provides a comprehensive review of recent developments in studies of strain effects in transition metal oxide ultra-thin films and nano/microwires. In epitaxial thin films, biaxial strain is developed as a result of lattice mismatch between the film and the substrate. By choosing different substrates, a wide range of strain can be established at discrete values that allows for exploration of new phase space, enhancement of order parameters, creation of complicated domain textures, and stabilization of new phases. On the other hand, continuous tuning of uniaxial strain is possible in nano/ microwires, where a variety of phase transitions and their dynamics could be probed at the single or few-domain scale. We focus on the work of strain-controlled electromechanical response in piezoelectric oxides and strain-induced metal-insulator transitions as well as domain physics in strongly correlated electron oxides. Related nanoscale device applications such as strain sensing and power generation will be highlighted as well.
机译：过渡金属氧化物具有广泛的特性，为广泛的潜在应用奠定了基础。这些特性中的许多特性源自晶格变形与纳米级电子和磁性有序之间的固有耦合。因此，晶格应变对这些材料的电，光和磁性能具有深远的影响。材料处理方面的最新进展已导致合成了低维单晶过渡金属氧化物，即外延超薄膜和独立式纳米/微线。与散装材料不同，这些系统允许外部调整这些材料中的均匀应变，以调整其特性和功能。本文对过渡金属氧化物超薄膜和纳米/微线中应变效应研究的最新进展进行了全面综述。在外延薄膜中，由于薄膜和衬底之间的晶格失配而产生了双轴应变。通过选择不同的衬底，可以在离散值处建立宽范围的应变，从而允许探索新的相空间，增强阶数参数，创建复杂的畴纹理以及稳定新的相。另一方面，可以在纳米/微丝中连续调谐单轴应变，在纳米或微丝中，可以在单域或少数域尺度上探究各种相变及其动力学。我们专注于压电氧化物中的应变控制机电响应和应变诱导的金属-绝缘体跃迁以及强相关电子氧化物中的域物理方面的工作。相关的纳米级设备应用（例如应变传感和发电）也将重点介绍。

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  • 来源
    《Materials Science & Engineering》 |2011年第4期|p.35-52|共18页
  • 作者

    Jinbo Cao; rnJunqiao Wu;

  • 作者单位

    Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, United States Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, United States;

    rnDepartment of Materials Science and Engineering, University of California, Berkeley, CA 94720, United States Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, United States;

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  • 正文语种 eng
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  • 关键词

    nanowire; thin film; strain; transition metal oxide; correlated electron material; phase transition;

    机译：纳米线薄膜;应变;过渡金属氧化物相关电子材料相变;

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