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Electromigration in submicron interconnect features of integrated circuits

机译：集成电路的亚微米互连特征中的电迁移

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摘要

Electromigration (EM) is a complex multiphysics problem including electrical, thermal, and mechanical aspects. Since the first work on EM was published in 1907, extensive studies on EM have been conducted theoretically, experimentally, and by means of computer simulation. Today EM is the most significant threat for interconnect reliability in high performance integrated circuits.rnOver years, physicists, material scientists, and engineers have dealt with the EM problem developing different strategies to reduce EM risk and methods for prediction of EM life time. During the same time a significant amount of work has been carried out on fundamentally understanding of EM physics, of the influence of material and geometrical properties on EM, and of the interconnect operating conditions on EM. In parallel to the theoretical studies, a large amount of work has been performed in experimental studies, mostly motivated by urgent and specific problem settings which engineers encounter during their daily work. On the basis of accelerated electromigration tests, various time-to-failure estimation methods with Blacks equation and statistics have been developed. The big question is, however, the usefulness of this work, since most contributions about electromigration and the accompanying stress effects are based on a very simplified picture of electromigration.rnThe intention of this review paper is to present the most important aspects of theoretical and experimental EM investigations together with a brief history of the development of the main concepts and methods. We present an overview of EM models from their origins in classical materials science methods up to the most recent developments for submicron interconnect features, as well as the application of ab initio and first principle methods. The main findings of experimental studies, important for any model development and application, will also be presented.
机译：电迁移（EM）是一个复杂的多物理场问题，包括电，热和机械方面。自1907年发表关于EM的第一篇著作以来，从理论上，实验上以及通过计算机模拟的方式对EM进行了广泛的研究。如今，EM是高性能集成电路中互连可靠性的最重大威胁。多年来，物理学家，材料科学家和工程师一直在研究EM问题，他们开发了各种降低EM风险的策略和预测EM寿命的方法。同时，在从根本上理解电磁物理，材料和几何特性对电磁的影响以及互连工作条件对电磁的理解方面，已经进行了大量工作。与理论研究并行的是，在实验研究中进行了大量工作，主要是由工程师在日常工作中遇到的紧急而具体的问题所激发的。在加速电迁移测试的基础上，已经开发了各种具有Blacks方程和统计数据的失效时间估算方法。但是，最大的问题是这项工作的用处，因为有关电迁移和随之而来的应力效应的大多数贡献都是基于对电迁移的非常简化的描述。rn本文的目的是介绍理论和实验的最重要方面EM调查以及主要概念和方法发展的简要历史。我们从原始材料科学方法的起源到亚微米互连功能的最新发展以及从头算和第一原理方法的应用，概述了EM模型。实验研究的主要发现，对于任何模型的开发和应用也很重要。

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  • 来源
    《Materials Science & Engineering》 |2011年第6期|p.53-86|共34页
  • 作者

    H. Ceric; S. Selberherr;

  • 作者单位

    Christian Doppler Laboratory for Reliability Issues in Microelectronics at the Institute for Microelectronics, Austria Institute for Microelectronics, TU Wien, Gusshausstrasse 27-29, 1040 Wien, Austria;

    rnInstitute for Microelectronics, TU Wien, Gusshausstrasse 27-29, 1040 Wien, Austria;

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  • 正文语种 eng
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  • 关键词

    electromigration; reliability; modeling; simulation; interconnect;

    机译：电迁移可靠性;造型;模拟;相互联系;

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