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On the Nanocommunications at THz Band in Graphene-Enabled Wireless Network-on-Chip

机译：启用石墨烯的无线片上网络中THz频段的纳米通信

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摘要

One of the main challenges towards the growing computation-intensive applications with scalable bandwidth requirement is the deployment of a dense number of on-chip cores within a chip package. To this end, this paper investigates theWireless Networkon-Chip (WiNoC), which is enabled by graphene-based nanoantennas (GNAs) in Terahertz frequency band. We first develop a channel model between the GNAs taking into account the practical issues of the propagation medium, such as transmission frequency, operating temperature, ambient pressure, and distance between the GNAs. In the Terahertz band, not only dielectric propagation loss but also molecular absorption attenuation (MAA) caused by various molecules and their isotopologues within the chip package constitutes the signal transmission loss. We further propose an optimal power allocation to achieve the channel capacity. The proposed channel model shows that the MAA significantly degrades the performance at certain frequency ranges compared to the conventional channel model, even when the GNAs are very closely located. More specifically, at transmission frequency of 1 THz, the channel capacity of the proposed model is shown to be much lower than that of the conventional model over the whole range of temperature and ambient pressure of up to 26.8% and 25%, respectively.
机译：对于具有可扩展带宽要求的，不断增长的计算密集型应用程序，主要挑战之一是在芯片封装内部署大量的片上内核。为此，本文研究了无线片上无线网络（WiNoC），该无线网络由太赫兹频段中基于石墨烯的纳米天线（GNA）启用。首先，我们考虑到传播介质的实际问题，例如传输频率，工作温度，环境压力以及GNA之间的距离，在GNA之间建立一个信道模型。在太赫兹频带中，芯片封装内的各种分子及其同位素引起的介电传播损耗和分子吸收衰减（MAA）均构成信号传输损耗。我们进一步提出最佳功率分配以实现信道容量。所提出的信道模型表明，即使在GNA位置非常接近的情况下，与传统的信道模型相比，MAA也会在某些频率范围内显着降低性能。更具体地说，在1 THz的传输频率下，所提出的模型的信道容量在温度和环境压力分别高达26.8％和25％的整个范围内都显示出比传统模型低得多。

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  • 来源
    《Mathematical Problems in Engineering》 |2017年第7期|9768604.1-9768604.13|共13页
  • 作者

    Quoc-Tuan Vien; Agyeman Michael Opoku; Tuan Anh Le; Mak Terrence;

  • 作者单位

    Middlesex Univ, Fac Sci & Technol, London NW4 4BT, England;

    Univ Northampton, Dept Comp & Immers Technol, Northampton NN2 6JB, England;

    Middlesex Univ, Fac Sci & Technol, London NW4 4BT, England;

    Univ Southampton, Sch Elect & Comp Sci, Southampton SO17 1BJ, Hants, England;

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