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THREE NOVEL SINGLE-ELECTRON NAND-BASED D FLIP-FLOP COUNTERS

机译:三个新颖的单电子与非基于D翻转计数器

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The single-electron (SE) NAND gate, that consists of a SE linear threshold gate (LTG) AND gate followed by a CMOS-based SE transistor (SET) inverter, is a basic functional SE Nano-device. In this paper, the SE NAND-based positive-edge-triggered (PET) D-FF with asynchronous Preset and Clear is reviewed. The SE NAND-based master-slave (MS) negative-edge-triggered (NET) D-FF with asynchronous Clear is introduced. The estimated delay and energy consumption of the developed SE D-FFs are calculated. A 2-bit ripple counter, using the SE MS NET D-FFs, is demonstrated. The 2-bit ripple counter has 88 tunnel junctions (TJs) and 158 capacitors. A 3-bit Johnson counter and a 3-bit ring counter, using the SE PET D-FFs, are illustrated. Each of these counters has 90 TJs and 180 capacitors. All developed SE counters are designed and simulated using the Monte Carlo Nano-simulator SIMON 2.0. The designed counters can easily be generalized to implement n-bit SE counters. Other counters can also be implemented using the developed SE NAND-based edge-triggered D-FFs.
机译:单电子(SE)与非门是一种基本的功能性SE纳米器件,它由SE线性阈值门(LTG)AND门和基于CMOS的SE晶体管(SET)反相器组成。本文对具有异步预设和清除功能的基于SE NAND的正缘触发(PET)D-FF进行了综述。介绍了具有异步清除功能的基于SE NAND的主从(MS)负沿触发(NET)D-FF。计算出已开发的SE D-FF的估计延迟和能耗。演示了使用SE MS NET D-FF的2位波纹计数器。 2位波纹计数器具有88个隧道结(TJ)和158个电容器。说明了使用SE PET D-FF的3位Johnson计数器和3位Ring计数器。这些计数器每个都有90个TJ和180个电容器。所有开发的SE计数器都是使用Monte Carlo纳米模拟器SIMON 2.0设计和模拟的。设计的计数器可以很容易地推广到实现n位SE计数器。其他计数器也可以使用开发的基于SE NAND的边沿触发D-FF来实现。

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