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首页> 外文期刊>Microelectronic Engineering >Ⅰ-Ⅴ hysteresis characteristics of nano-field effect transistor (nanoFET) sensor with a floating metal gate electrode
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Ⅰ-Ⅴ hysteresis characteristics of nano-field effect transistor (nanoFET) sensor with a floating metal gate electrode

机译：带有浮动金属栅电极的纳米场效应晶体管（nanoFET）传感器的Ⅰ-Ⅴ类磁滞特性

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摘要

A sensor based on a nano-field-effect transistor (nanoFET) can detect airborne charged substances and biomolecules or in a liquid environment in real time and a label-free manner. The approach is based on the principle of chemical gating, which is induced by the adsorption of charged substances on the surface of the FET channel. This study involved the fabrication of a nanoFET sensor with a top metal-gate electrode structure and the analysis of its I-V characteristics to assess its repeatability with respect to detecting airborne anions. We show that the I-V characteristics of the nanoFET sensor with a top metal gate electrode are affected by the capacitive coupling between the top metal sensing gate and the bottom back-gate by double sweeping the back-gate voltage. The proposed method to refresh and reinitialize the sensor is proven experimentally by recording the hysteresis of the nanoFET sensor with the top metal gate electrode. Consequently, the nanoFET sensor with an electrode with a top metal sensing gate could be reset by sweeping the back-gate bias voltage of the nanoFET device and show that the proposed structure is essential to reinitialize the sensor after the measurement. These properties of the nanoFET device with the top metal gate electrode enable the nanoFET sensor to be reinitialized by using only back-gate voltage sweep, contrary to the sensor without the metal gate.
机译：基于纳米场效应晶体管（nanoFET）的传感器可以实时且无标签的方式检测空气中带电的物质和生物分子或在液体环境中。该方法基于化学选通原理，该原理是由带电物质在FET通道表面上的吸附引起的。这项研究涉及制造具有顶部金属栅电极结构的nanoFET传感器，并对其I-V特性进行分析，以评估其在检测空气中阴离子方面的可重复性。我们显示，具有顶部金属栅电极的nanoFET传感器的I-V特性受两次扫过背栅电压的顶部金属感测栅与底部背栅之间的电容耦合的影响。通过记录带有顶部金属栅电极的nanoFET传感器的磁滞现象，实验证明了提出的刷新和重新初始化传感器的方法。因此，可以通过扫描nanoFET器件的背栅偏置电压来重置带有顶部金属感测栅电极的nanoFET传感器，并表明所提出的结构对于在测量后重新初始化传感器至关重要。与没有金属栅极的传感器相反，具有顶部金属栅电极的nanoFET器件的这些特性使得仅通过背栅电压扫描就可以重新初始化nanoFET传感器。

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