High-resolution, spatially-resolved surface potential investigations of high-strength metallurgical graphene using scanning tunnelling potentiometry

Gajewski Krzysztof; Kunicki Piotr; Sierakowski Andrzej; Szymanski Witold; Kaczorowski Witold; Niedzielski Piotr; Ramadan Sami; Shaforost Olena; Klein Norbert; Hao Ling; Gotszalk Teodor

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High-resolution, spatially-resolved surface potential investigations of high-strength metallurgical graphene using scanning tunnelling potentiometry

机译：使用扫描隧道电位测量高强度冶金石墨烯的高分辨率，空间分辨的表面电位研究

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摘要

Here we present an approach to measure the surface potential distribution of specimens using scanning tunnelling potentiometry with high potential gradients and relatively low sample bias. A special design of test structures containing pre-patterned electrodes was employed. Material of interest is transferred onto test structures, so that additional material processing during the investigations can be avoided. The utility of this solution is assessed in an investigation of high-strength metallurgical graphene. A maximum potential gradient of 49.2 V/mm was obtained by applying a sample bias of 0.8 V. Values of the resistivity of graphene inclusions up to 450 Omega.mu m were observed. The influence of inclusions could be reduced by performing controllable post-transfer annealing. This could remove polymer residue from the graphene surface, but may introduce additional features in the Raman spectra. Work functions of 4.68-4.70 eV were estimated using Kelvin probe force microscopy.

机译：在这里，我们提出了一种测量样品表面电位分布的方法，使用具有高潜在梯度和相对低的样本偏压。采用含有预图形电极的测试结构的特殊设计。感兴趣的材料转移到测试结构上，从而可以避免在调查期间的额外材料处理。在高强度冶金石墨烯的研究中评估了该解决方案的效用。通过施加0.8V的样品偏压而获得的最大电位梯度为49.2V / mm。将图形夹杂物的电阻率的值观察到高达450ωmum。通过进行可控后退火，可以减少夹杂物的影响。这可以从石墨烯表面除去聚合物残留物，但可以在拉曼光谱中引入额外的特征。使用Kelvin探针力显微镜估算4.68-4.70eV的工作功能。

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来源
《Microelectronic Engineering》 |2019年第5期|1-8|共8页
作者
Gajewski Krzysztof; Kunicki Piotr; Sierakowski Andrzej; Szymanski Witold; Kaczorowski Witold; Niedzielski Piotr; Ramadan Sami; Shaforost Olena; Klein Norbert; Hao Ling; Gotszalk Teodor;
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作者单位

Wroclaw Univ Sci & Technol Fac Microsyst Elect & Photon Ul Z Janiszewskiego 11-17 PL-50372 Wroclaw Poland;

Wroclaw Univ Sci & Technol Fac Microsyst Elect & Photon Ul Z Janiszewskiego 11-17 PL-50372 Wroclaw Poland;

Inst Electr Mat Technol Div Silicon Microsyst & Nanostruct Technol Al Lotnikow 32-46 PL-02668 Warsaw Poland;

Lodz Univ Technol Inst Mat Sci & Engn Ul Stefanowskiego 1-15 Lodz Poland;

Lodz Univ Technol Inst Mat Sci & Engn Ul Stefanowskiego 1-15 Lodz Poland;

Lodz Univ Technol Inst Mat Sci & Engn Ul Stefanowskiego 1-15 Lodz Poland;

Imperial Coll Dept Mat London SW7 2AZ England;

Imperial Coll Dept Mat London SW7 2AZ England;

Imperial Coll Dept Mat London SW7 2AZ England;

Natl Phys Lab Teddington TW11 0LW Middx England;

Wroclaw Univ Sci & Technol Fac Microsyst Elect & Photon Ul Z Janiszewskiego 11-17 PL-50372 Wroclaw Poland;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
Raman spectroscopy; SEM; STP; KPFM; Potential distribution; Graphene;

机译：拉曼光谱;SEM;STP;KPFM;潜在分布;石墨烯;

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专利

1. High-resolution, spatially-resolved surface potential investigations of high-strength metallurgical graphene using scanning tunnelling potentiometry [J] . Gajewski Krzysztof, Kunicki Piotr, Sierakowski Andrzej, Microelectronic Engineering . 2019,第MAY期

机译：高强度冶金石墨烯的高分辨率，空间分辨表面势的扫描隧穿电位法研究
2. Numerical calculation of the potential distribution on the Si(111)-7×7 surface for scanning tunneling potentiometry [J] . Hamada Masayuki, Yang Hung-Hsiang, Hasegawa Yukio Japanese journal of applied physics . 2020,第SN期

机译：用于扫描隧穿电位测量的Si（111）-7×7表面电位分布的数值计算
3. High-resolution scanning tunneling microscopy investigation of the (12110) and (10000) two-fold symmetric d-Al-Ni-Co quasicrystalline surfaces [J] . R. Maeder, R. Widmer, P. Groening, Physical review . 2009,第3期

机译：（12110）和（10000）双重对称d-Al-Ni-Co准晶体表面的高分辨率扫描隧道显微镜研究
4. A simple implementation of scanning tunneling potentiometry with a standard scanning tunneling microscope [C] . Ting Xie, Michael Dreyer, David Bowen, International Conference on Nanotechnology . 2017

机译：使用标准扫描隧道显微镜的扫描隧道电位法的简单实现
5. Development of a scanning tunneling potentiometry system for measurement of electronic transport at short length scales. [D] . Rozler, Michael. 2009

机译：开发了一种扫描隧道电位计系统，用于测量短尺度的电子传输。
6. High-resolution scanning tunneling microscopy imaging of mesoscopic graphene sheets on an insulating surface [O] . Elena Stolyarova, Kwang Taeg Rim, Sunmin Ryu, 2007

机译：绝缘表面上介观石墨烯片的高分辨率扫描隧道显微镜成像
7. High-resolution scanning tunneling microscopy investigation of the (12110) and (10000) two-fold symmetric d-Al-Ni-Co quasicrystalline surfaces [O] . Maeder R., Widmer R., Groening P., 2009

机译：（12110）和（10000）双重对称d-Al-Ni-Co准晶体表面的高分辨率扫描隧道显微镜研究
8. Bridging the pressure gap: In situ atomic-level investigations of model platinum catalyst surfaces under reaction conditions by scanning tunneling microscopy [R] . McIntyre, B. J. 1994

机译：弥合压力差距：通过扫描隧道显微镜在反应条件下对模型铂催化剂表面进行原位原子级研究

High-resolution, spatially-resolved surface potential investigations of high-strength metallurgical graphene using scanning tunnelling potentiometry

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