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首页> 外文期刊>Microelectronic Engineering >Technology and optimization of hafnium oxynitride (HfO_xN_y) thin-films formed by pulsed-DC reactive magnetron sputtering for MIS devices
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Technology and optimization of hafnium oxynitride (HfO_xN_y) thin-films formed by pulsed-DC reactive magnetron sputtering for MIS devices

机译：MIS装置脉冲DC反应磁控溅射形成的氧氮化铪（HFO_XN_Y）薄膜的技术和优化

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摘要

This study is devoted to the technology and optimization of pulsed-DC reactive magnetron sputtering of hafnium oxynitride (HfOxNy) thin-films. The fabrication process of HfOxNy films was optimized employing the Taguchi orthogonal tables approach leading to the material with possible best electrical parameters. During the opti-mization procedure, the parameters of dielectric films were monitored by means of electrical characterization of MIS structures with hafnium oxynitride as the gate-dielectric. The thermal stability of fabricated HfOxNy layers was also examined. The presented results have shown the improved electrical parameters of fabricated films after thermal treatment. Namely, we have observed beneficial flat-band voltage (V-fb) value, the disappearance of frequency dispersion of C-V characteristics, reduced effective charge (Q(eff)/q), and interface traps (D-it) densities of examined MIS structures. However, the permittivity value is slightly lower as compared to reference samples. The superior stability of HfOxNy layers up to 800 degrees C was proved. Although the significant increase of crystalline phase in the layer bulk was observed, no deterioration of electrical properties or surface morphology has been noticed. The results presented in this study make the investigated HfOxNy fabricated using pulsed-DC reactive magnetron sputtering the possible candidate as a gate dielectric in MIS structures and devices.
机译：该研究致力于氧化铪（HFOXNY）薄膜的脉冲-DC反应磁控溅射的技术和优化。 HFOXNY薄膜的制造过程经过优化采用Taguchi正交表方法，其导致具有可能最佳电气参数的材料。在光学元件过程中，通过用氧氮化铪作为栅极电介质的MIS结构的MIS结构来监测介电膜的参数。还检查了制造的HFOXNY层的热稳定性。所提出的结果显示了热处理后制造薄膜的改善的电气参数。即，我们观察了有益的平坦带电压（V-FB）值，CV特性的频率分散的消失，有效充电减少（Q（Quef）/ Q），以及界面陷阱（D-IT）的审查MIS的密度结构。然而，与参考样品相比，介电常数值略低。证明了高达800℃的HFOXNY层的优越稳定性。虽然观察到层堆积中的结晶相的显着增加，但没有发现电学性质或表面形态的劣化。本研究中提出的结果使研究使用脉冲-DC反应磁控管溅射可能的候选物作为MIS结构和器件中的栅极电介质制造的调查的HFoxny。

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