首页> 外文期刊>Microelectronic Engineering >Effect of 4-point bending test procedure on crack propagation in thin film stacks
【24h】

Effect of 4-point bending test procedure on crack propagation in thin film stacks

机译:四点弯曲测试程序对薄膜堆叠中裂纹扩展的影响

获取原文
获取原文并翻译 | 示例
           

摘要

An in-depth study of 4-point bending (4PB) test method had been conducted in order to determine the influence of test parameters on measured critical energy release rate G(c) and fracture location. Force loading speed proved to have an influence not only on measured G(c) values, but also on quality of force-displacement curve plateau, as did the loading pin distance. While the 4PB technique is used to determine the adhesion strength of a material, a study of notch depth had also been conducted in order to determine whether it is possible to trigger the cohesive failure of the tested low-k. In addition to the experimental work, the influence of crack propagation path within the sample (symmetric and asymmetric propagation) on measured force plateau was assessed using a Finite Element Method (FEM) modeling. Assuming same interfaces triggered, crack propagation path was shown to have no influence on the value of force plateau. The FEM simulation also showed good correlation with analytical results found in literature in regards to crack opening. (C) 2014 Elsevier B.V. All rights reserved.
机译:为了确定测试参数对测得的临界能量释放速率G(c)和断裂位置的影响,对4点弯曲(4PB)测试方法进行了深入研究。事实证明,力加载速度不仅会影响测得的G(c)值,而且会影响力-位移曲线平台的质量,而加载销的距离也会受到影响。虽然使用4PB技术确定材料的粘合强度,但还进行了缺口深度研究,以确定是否有可能触发被测低k的内聚破坏。除了实验工作外,还使用有限元方法(FEM)建模评估了样品中裂纹扩展路径(对称和非对称扩展)对测得的力平稳期的影响。假设触发了相同的界面,则表明裂纹扩展路径对力平稳值没有影响。有限元模拟还显示出与裂纹打开方面的文献中的分析结果良好的相关性。 (C)2014 Elsevier B.V.保留所有权利。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号