Defect assessment and leakage control in Ge junctions

M.B. Gonzalez; E. Simoen; G. Eneman; B. De Jaeger; G. Wang; R. Loo; C. Claeys

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Defect assessment and leakage control in Ge junctions

机译：锗结的缺陷评估和泄漏控制

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In this work, the temperature behavior of the transport mechanisms present in Ge p~+n junctions selectively grown in shallow trench isolation (STI) substrates is investigated. Special attention is given to the impact of electrically active defects on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics. Moreover, deep level transient spectroscopy (DLTS) is performed in order to evaluate the electrical properties of the traps. The results show that the presence of threading dislocations and associated deep acceptors has a marked impact on the electrical characteristics. The DLTS response seems to be related to electron repulsive centers with an acceptor character located at ～0.33-0.40 eV below the conduction band. This mid-gap position yields very effective Shockley-Read-Hall centers and can explain the generation lifetime reduction and leakage increase observed in non-annealed Ge in STI Si diodes.

机译：在这项工作中，研究了在浅沟槽隔离（STI）衬底中选择性生长的Ge p〜+ n结中存在的传输机制的温度行为。特别注意电活性缺陷对电流-电压（I-V）和电容-电压（C-V）特性的影响。此外，执行深层瞬态光谱法（DLTS）以评估阱的电学性质。结果表明，螺纹位错和相关的深受体的存在对电气特性有显着影响。 DLTS响应似乎与电子排斥中心有关，其受主特征位于导带以下〜0.33-0.40 eV。该中间间隙位置产生了非常有效的Shockley-Read-Hall中心，并且可以解释STI Si二极管中非退火Ge的产生寿命降低和泄漏增加。

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来源
《Microelectronic Engineering》 |2014年第8期|33-37|共5页
作者
M.B. Gonzalez; E. Simoen; G. Eneman; B. De Jaeger; G. Wang; R. Loo; C. Claeys;
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作者单位

IMB-CNM (CS1C), Campus UAB, 08193 Bellaterra, Spain;

IMEC, Kapeldreef 75, B-3001 Leuven, Belgium,Dept. of Solid-State Sciences, Ghent University, 9000 Gent, Belgium;

IMEC, Kapeldreef 75, B-3001 Leuven, Belgium,EE Dept., KU Leuven, B-3001 Leuven, Belgium;

IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;

MEMC Electronic Materials Inc., St. Peters, MO 63376, United States;

IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;

IMEC, Kapeldreef 75, B-3001 Leuven, Belgium,EE Dept., KU Leuven, B-3001 Leuven, Belgium;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
Extended defects; Germanium; Junction leakage; Selective epitaxial growth;

机译：缺陷扩大;锗;结泄漏;选择性外延生长;

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Defect assessment and leakage control in Ge junctions

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