Understanding Ge impact on VT and VFB in Si_(1-x)Ge_x/Si pMOSFETs

A. Soussou; C. Leroux; D. Rideau; A. Toffoli; G. Romano; O. Saxod; G. Bidal; D. Barge; D. Pellissier-Tanon; F. Abbate; C. Tavernier; G. Reimbold; G. Ghibaudo

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Understanding Ge impact on VT and VFB in Si_(1-x)Ge_x/Si pMOSFETs

机译：了解Ge对Si_（1-x）Ge_x / Si pMOSFET中的VT和VFB的影响

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摘要

The Ge impact on the threshold voltage (VT) and the flat band voltage (VFB) of SiGe pMOSFETs is evaluated through a comparison of experiments and simulations with various SiGe thicknesses and Ge contents. Increasing Ge content shifts linearly (VT-VFB) in full agreement with Poisson-Schrodinger simulation results accounting for adequate band discontinuity and strain. An additional VFB shift is needed to match the measured CV in accumulation, revealing a work function modification or the presence of dipole in the gate stack due to Ge diffusion.

机译：通过比较各种SiGe厚度和Ge含量的实验和仿真，评估了Ge对SiGe pMOSFET的阈值电压（VT）和平带电压（VFB）的影响。 Ge含量的线性增加（VT-VFB）与Poisson-Schrodinger模拟结果完全吻合，说明了足够的带不连续性和应变。需要额外的VFB偏移来匹配累积的测得CV，从而揭示功函数的变化或由于Ge扩散而在栅堆叠中存在偶极子。

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来源
《Microelectronic Engineering》 |2013年第9期|282-285|共4页
作者
A. Soussou; C. Leroux; D. Rideau; A. Toffoli; G. Romano; O. Saxod; G. Bidal; D. Barge; D. Pellissier-Tanon; F. Abbate; C. Tavernier; G. Reimbold; G. Ghibaudo;
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作者单位

STMicroelectronics, 850, rue J. Monnet, BP. 16, 38921 Crolles, France,CEA-LETI, Campus MINATEC. 17 rue des Martyrs, 38054 Grenoble, Cedex 9, France,IMEP-LAHC, Campus MINATEC, 3 Parvis Louis Neel, 38016 Grenoble, Cedex 1, France;

CEA-LETI, Campus MINATEC. 17 rue des Martyrs, 38054 Grenoble, Cedex 9, France;

STMicroelectronics, 850, rue J. Monnet, BP. 16, 38921 Crolles, France;

CEA-LETI, Campus MINATEC. 17 rue des Martyrs, 38054 Grenoble, Cedex 9, France;

STMicroelectronics, 850, rue J. Monnet, BP. 16, 38921 Crolles, France,CEA-LETI, Campus MINATEC. 17 rue des Martyrs, 38054 Grenoble, Cedex 9, France;

STMicroelectronics, 850, rue J. Monnet, BP. 16, 38921 Crolles, France;

STMicroelectronics, 850, rue J. Monnet, BP. 16, 38921 Crolles, France;

STMicroelectronics, 850, rue J. Monnet, BP. 16, 38921 Crolles, France;

STMicroelectronics, 850, rue J. Monnet, BP. 16, 38921 Crolles, France;

STMicroelectronics, 850, rue J. Monnet, BP. 16, 38921 Crolles, France;

STMicroelectronics, 850, rue J. Monnet, BP. 16, 38921 Crolles, France;

CEA-LETI, Campus MINATEC. 17 rue des Martyrs, 38054 Grenoble, Cedex 9, France;

IMEP-LAHC, Campus MINATEC, 3 Parvis Louis Neel, 38016 Grenoble, Cedex 1, France;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
Threshold voltage; Flat band voltage; Measured CV; Poisson-Schrodinger simulation; VFB shift; Ge diffusion;

机译：门槛电压;平带电压;测得的简历;Poisson-Schrodinger模拟;VFB移位锗扩散;

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Understanding Ge impact on VT and VFB in Si_(1-x)Ge_x/Si pMOSFETs

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