High aspect ratio deep UV wire grid polarizer fabricated by double patterning

著录项

• 来源
  《Microelectronic Engineering》 |2012年第10期|p.433-435|共3页
• 作者

  T. Weber; T. Kaesebier; A. Szeghalmi; M. Knez; E.-B. Kley; A. Tuennermann;

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• 作者单位

  Institute of Applied Physics, Friedrich-Schiller-Universityjena, D 07745 Jena, Germany;

  Institute of Applied Physics, Friedrich-Schiller-Universityjena, D 07745 Jena, Germany;

  Institute of Applied Physics, Friedrich-Schiller-Universityjena, D 07745 Jena, Germany,Max Planck Institute of Microstructure Physics, D 06120 Halle (Saale), Germany;

  Max Planck Institute of Microstructure Physics, D 06120 Halle (Saale), Germany;

  Institute of Applied Physics, Friedrich-Schiller-Universityjena, D 07745 Jena, Germany;

  Institute of Applied Physics, Friedrich-Schiller-Universityjena, D 07745 Jena, Germany,Fraunhofer Institute for Applied Optics and Precision Engineering, D 07745 Jena, Germany;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  double patterning; E-beam lithography; nanooptics;

  机译：双重图案电子束光刻;纳米光学;