Fabrication of air-bridge Schottky diodes on germanium for high speed IR detectors

A. Notargiacomo; R. Bagni; E. Giovine; V. Foglietti; S. Carta; M. Pea; L Di Gaspare; G. Capellini; F. Evangelisti

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Fabrication of air-bridge Schottky diodes on germanium for high speed IR detectors

机译：在锗上制造用于高速红外探测器的气桥肖特基二极管

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We report on the fabrication process of suspended anodes implemented in Schottky-diode devices on epitaxial Ge. An air-bridge technique based on reactive ion etching in SF_6 was developed in order to release the Schottky contact bridge, ensuring higher control respect to wet etching. Metal-semiconductor junctions in the sub-micron range with rectifying behaviour have been obtained. The present fabrication process can be extended as is to the use of silicon on insulator substrates.

机译：我们报告在外延Ge上的肖特基二极管器件中实现的悬浮阳极的制造过程。为了释放肖特基接触桥，开发了一种基于SF_6中反应离子刻蚀的气桥技术，以确保对湿法刻蚀的更高控制。已经获得了具有整流行为的亚微米范围的金属-半导体结。可以将本制造工艺扩展为在绝缘体衬底上使用硅。

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来源
《Microelectronic Engineering》 |2011年第8期|p.2714-2716|共3页
作者
A. Notargiacomo; R. Bagni; E. Giovine; V. Foglietti; S. Carta; M. Pea; L Di Gaspare; G. Capellini; F. Evangelisti;
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作者单位

Institute of Photonics and Nanotechnologies - CNR, 00156 Rome, Italy;

Physics Department "E. Amaldi", Universita degli Studi Roma TRE, 00146 Rome, Italy;

Institute of Photonics and Nanotechnologies - CNR, 00156 Rome, Italy;

Institute of Photonics and Nanotechnologies - CNR, 00156 Rome, Italy;

Institute of Photonics and Nanotechnologies - CNR, 00156 Rome, Italy;

Physics Department "E. Amaldi", Universita degli Studi Roma TRE, 00146 Rome, Italy;

Physics Department "E. Amaldi", Universita degli Studi Roma TRE, 00146 Rome, Italy;

Physics Department "E. Amaldi", Universita degli Studi Roma TRE, 00146 Rome, Italy;

Physics Department "E. Amaldi", Universita degli Studi Roma TRE, 00146 Rome, Italy;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
air-bridge technology; epitaxial germanium; reactive ion etching; schottky diode; infrared detector;

机译：空桥技术;外延锗;反应离子刻蚀;肖特基二极管;红外探测器;

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1. TERAHERTZ DETECTORS CMOS Schottky diodes lower cost and raise far-IR responsivity of electronic detectors 14X [J] . Overton Gail Laser Focus World: The Magazine for the Photonics & Optoelectronics Industry . 2015,第8期

机译：TERAHERTZ DETECTORS CMOS肖特基二极管可降低成本并提高电子探测器的远红外响应14倍
2. Fabrication and Characterization of Schottky Diodes for High Resolution Nuclear Radiation Detectors [J] . Mandal K. C., Krishna R. M., Muzykov P. G., Nuclear Science, IEEE Transactions on . 2012,第4期

机译：高分辨率核辐射探测器的肖特基二极管的制备与表征
3. Design and fabrication of Schottky diode, on-chip RF power detector [J] . Woochul Jeon, Todd M. Firestone, John C. Rodgers, Solid-State Electronics . 2004,第10a11期

机译：肖特基二极管，片上射频功率检测器的设计与制造
4. First THz and IR characterization of nanometer-scaled antenna-coupled InGaAs/InP Schottky-diode detectors for room temperature infrared imaging [C] . H. Kazemi, K. Shinohara, G. Nagy, Infrared Technology and Applications XXXIII pt.1; Proceedings of SPIE-The International Society for Optical Engineering; vol.6542 pt.1 . 2007

机译：用于室温红外成像的纳米级天线耦合InGaAs / InP肖特基二极管探测器的首次THz和IR表征
5. Fabrication, Characterization and Simulation of Sandwich Structure GaN Schottky Diode Ionizing Radiation Detectors. [D] . Wang, Jinghui. 2014

机译：三明治结构GaN肖特基二极管电离辐射探测器的制作，表征和仿真。
6. The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm2 [O] . Lin-Yue Liu, Ling Wang, Peng Jin, 2017

机译：Ni / 4H-SiC肖特基二极管辐射探测器的制造与表征其敏感面积高达4 cm2
7. The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm2 [O] . Lin-Yue Liu, Ling Wang, Peng Jin, 2017

机译：Ni / 4H-siC肖特基二极管辐射探测器的制备和表征，灵敏面积可达4 cm2
8. Fabrication and Characterization of Vertical Gallium Nitride Power Schottky Diodes on Bulk GaN Substrates FY2016. [R] . Zhao, B. H., Derenge, M. A., Graziano, M. B., 2016

机译：FY2016体积GaN衬底上垂直氮化镓功率肖特基二极管的制备与表征。

Fabrication of air-bridge Schottky diodes on germanium for high speed IR detectors

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