...
首页> 外文期刊>Microelectronic Engineering >A comparative study of depth profiling of interface states using charge pumping and low frequency noise measurement in SiO_2/HfO_2 gate stack nMOSFETs
【24h】

A comparative study of depth profiling of interface states using charge pumping and low frequency noise measurement in SiO_2/HfO_2 gate stack nMOSFETs

机译:SiO_2 / HfO_2栅堆叠nMOSFET中使用电荷泵和低频噪声测量对界面状态进行深度剖析的比较研究

获取原文
获取原文并翻译 | 示例
           

摘要

Charge pumping and low frequency noise measurements for depth profiling have been studied systematically using a set of gate stacks with various combinations of IL and HfO_2 thicknesses. The distribution of generated traps after HCI and PBTI stress was also investigated. The drain-current power spectral density made up all of the traps of IL in 0 < z < T_(IL) and the traps of HfO_2 in T_(IL)
机译:已经使用一组具有IL和HfO_2厚度的各种组合的栅堆叠系统地研究了用于深度剖析的电荷泵和低频噪声测量。还研究了HCl和PBTI应力后产生的陷阱的分布。漏极电流功率谱密度由0

著录项

  • 来源
    《Microelectronic Engineering》 |2011年第12期|p.3411-3414|共4页
  • 作者单位

    Dept. of Electronic and Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Cyeongbuk 790-784, Republic of Korea;

    SEMATECH. 2706 Montopolis Drive, Austin, IX 78741, USA;

    Dept. of Electronic and Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Cyeongbuk 790-784, Republic of Korea;

    Dept. of Electronic and Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Cyeongbuk 790-784, Republic of Korea;

    Dept. of Electronic and Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Cyeongbuk 790-784, Republic of Korea;

    Dept. of Electronic and Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Cyeongbuk 790-784, Republic of Korea;

    Dept. of Electronic and Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Cyeongbuk 790-784, Republic of Korea;

    Dept. of Electronic and Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Cyeongbuk 790-784, Republic of Korea;

    Dept. of Electronic and Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Cyeongbuk 790-784, Republic of Korea;

    Dept. of Electronic and Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Cyeongbuk 790-784, Republic of Korea;

    SEMATECH. 2706 Montopolis Drive, Austin, IX 78741, USA;

    Dept. of Electronic and Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Cyeongbuk 790-784, Republic of Korea;

    SEMATECH. 2706 Montopolis Drive, Austin, IX 78741, USA;

    SEMATECH. 2706 Montopolis Drive, Austin, IX 78741, USA;

    Dept. of Electronic and Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Cyeongbuk 790-784, Republic of Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    low frequency noise; charge pumping; HfO_2/SiO_2 gate stack; HCI; PBTI;

    机译:低频噪声电荷泵;HfO_2 / SiO_2栅叠层;人机交互PBTI;

相似文献

  • 外文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号