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机译:SiO_2 / HfO_2栅堆叠nMOSFET中使用电荷泵和低频噪声测量对界面状态进行深度剖析的比较研究
Dept. of Electronic and Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Cyeongbuk 790-784, Republic of Korea;
SEMATECH. 2706 Montopolis Drive, Austin, IX 78741, USA;
Dept. of Electronic and Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Cyeongbuk 790-784, Republic of Korea;
Dept. of Electronic and Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Cyeongbuk 790-784, Republic of Korea;
Dept. of Electronic and Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Cyeongbuk 790-784, Republic of Korea;
Dept. of Electronic and Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Cyeongbuk 790-784, Republic of Korea;
Dept. of Electronic and Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Cyeongbuk 790-784, Republic of Korea;
Dept. of Electronic and Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Cyeongbuk 790-784, Republic of Korea;
Dept. of Electronic and Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Cyeongbuk 790-784, Republic of Korea;
Dept. of Electronic and Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Cyeongbuk 790-784, Republic of Korea;
SEMATECH. 2706 Montopolis Drive, Austin, IX 78741, USA;
Dept. of Electronic and Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Cyeongbuk 790-784, Republic of Korea;
SEMATECH. 2706 Montopolis Drive, Austin, IX 78741, USA;
SEMATECH. 2706 Montopolis Drive, Austin, IX 78741, USA;
Dept. of Electronic and Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Cyeongbuk 790-784, Republic of Korea;
low frequency noise; charge pumping; HfO_2/SiO_2 gate stack; HCI; PBTI;
机译:氮掺入对多晶硅/ TiN / HfO_2 / SiO_2栅叠层金属氧化物半导体场效应晶体管的低频噪声的影响
机译:低频电容电压测量双层HfO_2 / SiO_2高k栅堆叠中边界陷阱的空间和能量分布
机译:多晶硅/ HfO_2 /界面层栅堆叠MOSFET中电子陷阱位置的识别会降低低频噪声和PBTI
机译:利用低频噪声和电荷泵技术表征薄栅SiO_2 MOSFET中的栅SiO_2 /沟道-Si界面
机译:激光驱动的超导开关在基本测量和SQUID测量中降低低频噪声中的应用。
机译:下肢扭转轮廓的CT测量中观察者间和观察者间误差:回顾性比较研究
机译:栅极漏电流对alGaN / GaN HEmT的影响由低频噪声和脉冲电测量证明,栅极漏电流对alGaN / GaN HEmT的影响由脉冲I-V和低频噪声测量证明