Characterization of device performance and reliability of high performance Ge-on-Si field-effect transistor

著录项

• 来源
  《Microelectronic Engineering》 |2011年第12期|p.3424-3427|共4页
• 作者

  Won-Ho Choi; Jungwoo Oh; Ook-Sang Yoo; In-Shik Han; Min-Ki Na; Hyuk-Min Kwon; Byung-Suk Park; P. Majhi; H.-H. Tseng; R. Jammy; Hi-Deok Lee;

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• 作者单位

  SEMATECH. Austin, TX 78741, USA,Department of Electronics Engineering, Chungnam National University, Yusong-Cu, Daejeon 305-764, Republic of Korea;

  SEMATECH. Austin, TX 78741, USA;

  Department of Electronics Engineering, Chungnam National University, Yusong-Cu, Daejeon 305-764, Republic of Korea;

  Department of Electronics Engineering, Chungnam National University, Yusong-Cu, Daejeon 305-764, Republic of Korea;

  Department of Electronics Engineering, Chungnam National University, Yusong-Cu, Daejeon 305-764, Republic of Korea;

  Department of Electronics Engineering, Chungnam National University, Yusong-Cu, Daejeon 305-764, Republic of Korea;

  Department of Electronics Engineering, Chungnam National University, Yusong-Cu, Daejeon 305-764, Republic of Korea;

  SEMATECH. Austin, TX 78741, USA,Intel assignee;

  SEMATECH. Austin, TX 78741, USA;

  SEMATECH. Austin, TX 78741, USA;

  Department of Electronics Engineering, Chungnam National University, Yusong-Cu, Daejeon 305-764, Republic of Korea;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  ge epitaxy; Ge pMOSFETs; NBTI; high-k metal gate;

  机译：ge外延Ge pMOSFETs;NBTI;高k金属门;