Effect of interfacial oxide on Ge MOSCAP and N-MOSFET characteristics

著录项

• 来源
  《Microelectronic Engineering》 |2011年第12期|p.3428-3431|共4页
• 作者

  Duygu Kuzum; Jin-Hong Park; Tejas Krishnamohan; Krishna C. Saraswat;

  展开▼
• 作者单位

  Center of Integrated Systems, Stanford University, Stanford, CA 94305, United States;

  Center of Integrated Systems, Stanford University, Stanford, CA 94305, United States,Department of Electronics and Radio Engineering, College of Electronics and Information, Kyung Hee University, 446-701, Korea;

  Center of Integrated Systems, Stanford University, Stanford, CA 94305, United States,Intel Corporation, Santa Clara, CA, United States;

  Center of Integrated Systems, Stanford University, Stanford, CA 94305, United States;

  展开▼
• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  germanium; MOSCAP; MOSFET; gate dielectric; interface passivation; ozone oxidation;

  机译：锗;MOSCAP;MOSFET;栅极电介质界面钝化;臭氧氧化;