The dry etching of TEOS oxide for poly-Si cantilevers in supercritical CO_2

著录项

• 来源
  《Microelectronic Engineering》 |2011年第12期|p.3448-3451|共4页
• 作者

  Jae Mok Jung; Eunjin Yoon; Euesang Lim; Byung Chun Choi; Sang-Yong Kim; Kwon Taek Lim;

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• 作者单位

  Department of Imaging System Engineering, Pukyong National University, Busan 608-739, Republic of Korea;

  Department of Imaging System Engineering, Pukyong National University, Busan 608-739, Republic of Korea;

  Department of Imaging System Engineering, Pukyong National University, Busan 608-739, Republic of Korea;

  Department of Physics, Pukyong National University, Busan 608-737, Republic of Korea;

  Department of Semiconductor System, Korea Polytechnic College IV, Cheongju 361-857, Republic of Korea;

  Department of Imaging System Engineering, Pukyong National University, Busan 608-739, Republic of Korea;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  etching; sacrificial oxide; poly-si; supercritical carbon dioxide; MEMS; cantilever;

  机译：蚀刻牺牲氧化物多晶硅超临界二氧化碳MEMS;悬臂;