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首页> 外文期刊>Microelectronic Engineering >Removal Of Post-etch Photoresist And Sidewall Residues Using Organic Solvent And Additive Combined With Physical Forces
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Removal Of Post-etch Photoresist And Sidewall Residues Using Organic Solvent And Additive Combined With Physical Forces

机译：使用有机溶剂和添加剂结合物理力去除蚀刻后光刻胶和侧壁残留物

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摘要

The effect of tetramethyl ammonium hydroxide (TMAH) used as additive in organic solvent (N-methyl pyrrolidone, NMP) on removal efficiency of post-etch photoresist was investigated on both blanket substrate and single damascene structures. In contrast to plasma ashing, photoresist removal using NMP/ TMAH combined with megasonics showed no carbon depletion and no significant change in k-value. Mixing TMAH with NMP enhanced photoresist removal efficiency with respect to pure NMP. Photoresist removal using NMP/TMAH resulted in lower low-k capacitance (lower k-value) compared with that of plasma ashing process, due to the removal of the damaged layer generated during plasma etching. As a consequence of the removal of the damaged layer, a CD change was observed. The CD loss was estimated to be about 7 nm for 1% TMAH, and became negligible for 0.1% TMAH. Analysis of low-k sidewall using angle-resolved X-ray photoelectron spectroscopy showed that solvent mixture containing TMAH also removed sidewall residues generated by the etch plasma.
机译：在毯式基板和单一镶嵌结构上，研究了在有机溶剂（N-甲基吡咯烷酮，NMP）中用作添加剂的氢氧化四甲基铵（TMAH）对蚀刻后光刻胶去除效率的影响。与等离子灰化相反，使用NMP / TMAH和超音速技术去除光致抗蚀剂不会导致碳消耗，并且k值也不会发生显着变化。相对于纯NMP，将TMAH与NMP混合可提高光刻胶的去除效率。与等离子灰化工艺相比，使用NMP / TMAH去除光致抗蚀剂可降低低k电容（较低的k值），这是由于去除了等离子蚀刻过程中产生的损坏层。作为去除受损层的结果，观察到CD变化。对于1％TMAH，CD损失估计约为7 nm，而对于0.1％TMAH，其损失可忽略不计。使用角分辨X射线光电子能谱分析低k侧壁表明，包含TMAH的溶剂混合物还去除了蚀刻等离子体产生的侧壁残留物。

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