Fabrication of large area nano-rings for MRAM application

Yong Luo; Veena Misra

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Fabrication of large area nano-rings for MRAM application

机译：用于MRAM应用的大面积纳米环的制造

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We have developed lateral etch techniques to fabricate large area high density nano-scale magnetic ring arrays by deep ultraviolet lithography. Both centered and de-centered rings have been obtained. The width of the rings are controlled by the lateral etch time, and the inner ring diameter was scaled down below the lithography resolution limit. For de-centered rings, the shift between the center of inner and outer circles was easily adjustable. The characteristics of the ring arrays were characterized by SEM, AFM and SQUID.

机译：我们已经开发了横向蚀刻技术，通过深紫外光刻技术来制造大面积高密度纳米级磁环阵列。已经获得了定心环和偏心环。环的宽度由横向蚀刻时间控制，并且将内环直径缩小到光刻分辨率极限以下。对于偏心环，可以轻松调整内，外圆心之间的偏移。通过SEM，AFM和SQUID对环阵列的特征进行了表征。

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来源
《Microelectronic Engineering》 |2008年第7期|p.1555-1560|共6页
作者
Yong Luo; Veena Misra;
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作者单位

Department of Electrical and Computer Engineering, North Carolina State University. Raleigh, NC 27695, USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类微电子学、集成电路（IC）;
关键词
magnetic ring; lateral etch; de-centered ring;

机译：磁环;横向蚀刻;偏心环;

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Fabrication of large area nano-rings for MRAM application

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