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首页> 外文期刊>Microelectronic Engineering >Influence of mechanical stress on adhesion properties of DC magnetron sputtered Ti/NiV/Ag layers on n~+Si substrate
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Influence of mechanical stress on adhesion properties of DC magnetron sputtered Ti/NiV/Ag layers on n~+Si substrate

机译：机械应力对n〜+ Si衬底上直流磁控溅射Ti / NiV / Ag层附着性能的影响

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摘要

Due to insufficient adhesion of sputtered Ti/NiV/Ag metallization scheme on n~+Si substrate when annealed below 550 ℃, investigation was focused on the influence of process parameters on adhesion properties. Adhesion between metallic stack and Si substrate was found to be a strong function of annealing temperature. Additional investigations showed that the cause for poor adhesion was also rather high residual stress in metal thin layers, particularly stress in sputtered NiV layer. High residual stress was measured for NiV (1883 ± 252 MPa) and lower for Ti (334 ± 60 MPa) and Ag (310 + 10 MPa) layer, respectively. The influence of sputtering parameters on the stress behavior was experimentally verified. By reducing the cathode DC power and Ar working pressure during NiV sputtering we were able to reduce the stress within the structure. A clear correlation was found between the residual stress magnitude and adhesion properties within the temperature range from room temperature to 550 ℃ By residual stress reduction within a metallic stack, the necessary annealing temperature to obtain optimal adhesion was reduced from 550 to 500 ℃.
机译：由于在550℃以下退火时，溅射的Ti / NiV / Ag金属化方案在n〜+ Si衬底上的附着力不足，因此研究重点是工艺参数对附着性能的影响。发现金属叠层和Si衬底之间的粘附力是退火温度的强函数。进一步的研究表明，附着力差的原因还在于金属薄层中的残余应力较高，特别是溅射的NiV层中的应力较高。 NiV（1883±252 MPa）的残余应力较高，而Ti（334±60 MPa）和Ag（310 + 10 MPa）的残余应力较低。实验证明了溅射参数对应力行为的影响。通过降低NiV溅射过程中的阴极DC功率和Ar工作压力，我们能够减少结构内的应力。在室温至550℃的温度范围内，残余应力的大小与粘附性能之间存在明显的相关性。通过降低金属叠层中的残余应力，获得最佳粘附所需的退火温度从550降低至500℃。

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