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首页> 外文期刊>Microelectronic Engineering >The role of the interface insulator layer and interface states on the current-transport mechanism of Schottky diodes in wide temperature range
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The role of the interface insulator layer and interface states on the current-transport mechanism of Schottky diodes in wide temperature range

机译：界面绝缘层和界面状态在宽温度范围内对肖特基二极管电流传输机制的作用

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摘要

In order to interpret in detail the experimentally observed current-voltage-temperature (I-V-T) and capacitance-voltage-temperature (C-V-T) results of Al/p-Si metal-semiconductor Schottky barrier diodes (SBDs) we have been examined the samples in the temperature range of 150-375 K. In the calculation method, to confirm the relationship between the I-V-T and C-V-T results, we have reported a modification which includes the ideality factor, n, and tunnelling parameter δχ~(1/2) in the forward bias current characteristics. In the intermediate bias voltage region (0.1 < V < 0.6 V), the semi-logarithmic plots of the forward I-V-T curves were found to be linear. From the reverse saturation currents I_0 obtained by extrapolating the linear region of curves to zero applied voltage, the values of zero bias barrier heights φ_(B0) were calculated at each temperature. The values of ideality factor calculated from the slope of each curves were plotted as a function of temperature. The values of n are 3.41-1.40 indicating that the Al/p-Si diode does obey the thermionic field emission (TFE) mechanism rather than the other transport mechanism, particularly at low temperature. The high value of ideality factors is attributed to high density of interface states in the SBDs. The temperature dependence energy density distribution profile of interface state was obtained from the forward bias I- V-T measurements by taking into account the bias dependence of the effective barrier height and ideality factor. The interface states density N_(ss) decreasing with increasing temperature was interpreted by the result of atomic restructuring and reordering at the metal-semiconductor interface. After the modification was made to the forward current expression, we obtained a good agreement between the values of barrier height obtained from both methods over a wide temperature.
机译：为了详细解释实验观察到的Al / p-Si金属半导体肖特基势垒二极管（SBD）的电流-电压-温度（IVT）和电容-电压-温度（CVT）结果，我们检查了样品中的样品。在150-375 K的温度范围内。在计算方法中，为确认IVT和CVT结果之间的关系，我们报告了一个修改，其中包括理想因子n和前向隧穿参数δχ〜（1/2）。偏置电流特性。在中间偏置电压区域（0.1

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