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首页> 外文期刊>Microelectronic Engineering >Corona charging damage on thermal Si/SiO_2 structures with nm-thick oxides revealed by electron spin resonance
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Corona charging damage on thermal Si/SiO_2 structures with nm-thick oxides revealed by electron spin resonance

机译：电子自旋共振揭示纳米厚度氧化物对热Si / SiO_2结构的电晕充电损伤

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摘要

The impact of room temperature corona charging biasing on thermal (100) and (111)Si/SiO_2 entities with nm-thin (<5.7 nm) SiO_2 layers in terms of their point defect signature has been probed by electron spin resonance (ESR). Both structures fully passivated in H_2 as well as exhaustively H-depleted ones were investigated. The ESR study reveals that the versatile non-contacting corona biasing method frequently applied in the electrical analysis of Si/SiO_2-based structures is not a non-invasive tool, as usually assumed. In the absence of carrier impact damage, at least five types of ESR-active defects are generated (activated) in fully passivated entities, while ESR-active defects are partially inactivated in H-lean Si/SiO_2 entities, indicating the devastating nature and threatening inference of intrinsic device properties. The impact is ascribed to the interaction of atomic hydrogen released during the corona process with the Si/SiO_2 system.
机译：通过电子自旋共振（ESR）探究了室温电晕充电偏压对具有nm薄（<5.7 nm）SiO_2层的热（100）和（111）Si / SiO_2实体的点缺陷特征的影响。研究了在H_2中完全钝化的两种结构以及完全耗尽H的结构。 ESR研究表明，通常在基于Si / SiO_2的结构的电分析中经常使用的通用非接触式电晕偏压方法不是一种非侵入性工具。在没有载体冲击损伤的情况下，在完全钝化的实体中至少会生成（激活）五种ESR活性缺陷，而在贫H的Si / SiO_2实体中ESR活性缺陷会部分失活，这表明其破坏性和威胁性推断设备的固有属性。该影响归因于电晕过程中释放的氢原子与Si / SiO_2系统的相互作用。

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