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首页> 外文期刊>Microelectronics journal >Reliability computer-aided design tool for full-chip electromigration analysis and comparison with different interconnect metallizations
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Reliability computer-aided design tool for full-chip electromigration analysis and comparison with different interconnect metallizations

机译：可靠的计算机辅助设计工具，用于全芯片电迁移分析以及与不同互连金属层的比较

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摘要

We have developed a set of methodologies for thermal aware circuit-level reliability analysis with either Al or Cu metallization in a circuit layout and implemented it in a public domain reliability CAD tool, SysRel. SysRel utilizes a hierarchical reliability analysis flow, with interconnect trees treated as the fundamental reliability unit, that sufficiently captures the differences in electromigration failure between Al and Cu metallizations. Under similar test conditions, the electromigration reliability of Al and Cu interconnect trees demonstrates significant differences because of the differences in interconnect architectural schemes. Using the best estimates of material parameters and an analytical model, we present a detail comparison of electromigration reliability of a sample test-structure as well as of actual circuit layouts with Al and Cu dual-damascene interconnect systems. We also demonstrate fast thermal-analysis in SysRel for circuit performance driven chip-level reliability assessment.
机译：我们已经开发了一套用于在电路布局中使用Al或Cu金属化进行热感知电路级可靠性分析的方法，并在公共领域可靠性CAD工具SysRel中实现了该方法。 SysRel利用分层的可靠性分析流程，将互连树视为基本的可靠性单元，从而充分捕获了Al和Cu金属化层之间电迁移失败的差异。在相似的测试条件下，由于互连架构方案的差异，Al和Cu互连树的电迁移可靠性表现出显着差异。使用材料参数的最佳估计值和分析模型，我们对样品测试结构的电迁移可靠性以及采用Al和Cu双金属镶嵌互连系统的实际电路布局进行了详细的比较。我们还演示了SysRel中的快速热分析，用于电路性能驱动的芯片级可靠性评估。

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