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首页> 外文期刊>Microelectronics journal >Improvement of the field emission characteristics of an oxidized porous polysilicon using annealed Pt/Ti surface emitter electrode
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Improvement of the field emission characteristics of an oxidized porous polysilicon using annealed Pt/Ti surface emitter electrode

机译：使用退火的Pt / Ti表面发射电极改善氧化多孔多晶硅的场致发射特性

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摘要

The field emission characteristics of an oxidized porous polysilicon were investigated with different annealing temperatures. Pt/Ti, Ir, and Au/NiCr were used as surface emitter electrodes, and Pt/Ti emitter showed highly efficient and stable electron emission characteristic compared with the conventional Au/NiCr electrode. Thin Ti layer played an important role in promotion of adhesion of Pt to SiO_2 surface and uniform distribution of electric field on the OPPS surface. Additionally, the Ti layer efficiently blocked the diffusion of emitter metal, which resulted in more reliable emission characteristics. Pt/Ti emitter annealed at 350℃/1 h showed the highest efficiency of 3.36% at V_(ps)= 16 V, which resulted from the improvement of interfacial contact characteristics of thin emitter metal to an oxidized porous polysilicon. Annealing above 400℃ showed that Pt/Ti and Ir emitter electrode were thermally more stable than Au/NiCr emitter.
机译：研究了不同退火温度下氧化多孔多晶硅的场发射特性。 Pt / Ti，Ir和Au / NiCr用作表面发射电极，与传统的Au / NiCr电极相比，Pt / Ti发射器显示出高效且稳定的电子发射特性。 Ti薄层在促进Pt与SiO_2表面的附着力以及OPPS表面电场的均匀分布方面起着重要作用。另外，Ti层有效地阻止了发射极金属的扩散，这导致了更可靠的发射特性。在350℃/ 1 h退火的Pt / Ti发射极在V_（ps）= 16 V时显示出3.36％的最高效率，这是由于薄发射极金属与氧化多孔多晶硅的界面接触特性得到了改善。 400℃以上的退火温度表明Pt / Ti和Ir发射极比Au / NiCr发射极热稳定。

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