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首页> 外文期刊>Microelectronics reliability >Investigation on the thermal behavior of 0.15 μm gate-length In_(0.4)Al_(0.6)As/In_(0.4)Ga_(0.6)As MHEMT
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Investigation on the thermal behavior of 0.15 μm gate-length In_(0.4)Al_(0.6)As/In_(0.4)Ga_(0.6)As MHEMT

机译：0.15μm栅长In_（0.4）Al_（0.6）As / In_（0.4）Ga_（0.6）As MHEMT的热行为研究

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摘要

In this study, we have successfully investigated the electrical performances of In_(0.4)Al_(0.6)As/In_(0.4)Ga_(0.6)As metamorphic high-electron-mobility transistor (MHEMT) at temperatures range from 275 K to 500 K comprehensively. By extracting the device S-parameters, the temperature dependent small signal model has been established. At room temperature, 0.15 μm T-gate device with double δ-doping design exhibits f_T and f_(MAX) values of 103 GHz and 204 GHz at V_(ds) = 1 V, an extrinsic transconductance of 678 mS/mm, and a current density of 578 mA/mm associated with a high breakdown voltage of -13 V. Power measurements were evaluated at 40 GHz and the measured output power, linear power gain, and maximum power-added efficiency, were 7.12 dBm, 10.15 dB, and 23.1%, respectively. The activation energy (E_a) extracted from Arrhenius plots is = 0.34 eV at 150≦T≦ 350 K. The proposed device is promisingly suitable for millimeter-wave power application.
机译：在这项研究中，我们已经成功地研究了In_（0.4）Al_（0.6）As / In_（0.4）Ga_（0.6）As变质高电子迁移率晶体管（MHEMT）在275 K至500 K的温度范围内的电性能全面地。通过提取设备的S参数，已建立了温度相关的小信号模型。在室温下，采用双δ掺杂设计的0.15μmT栅极器件在V_（ds）= 1 V时表现出103 GHz和204 GHz的f_T和f_（MAX）值，678 mS / mm的非本征跨导和电流密度为578 mA / mm，具有-13 V的高击穿电压。在40 GHz下对功率测量进行了评估，测得的输出功率，线性功率增益和最大功率附加效率为7.12 dBm，10.15 dB和分别为23.1％。从Arrhenius曲线中提取的活化能（E_a）在150≤T≤350K时为= 0.34 eV。所提出的器件有望应用于毫米波功率应用。

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  • 来源
    《Microelectronics reliability》 |2012年第6期|p.969-973|共5页
  • 作者

    Che-Kai Lin; Hsien-Chin Chiu; Chao-Wei Lin; Hsuan-ling Kao; Feng-Tso Chien;

  • 作者单位

    Department of Electronics Engineering, Chang Cung University, Taoyuan, Taiwan, ROC;

    Department of Electronics Engineering, Chang Cung University, Taoyuan, Taiwan, ROC;

    Department of Electronics Engineering, Chang Cung University, Taoyuan, Taiwan, ROC;

    Department of Electronics Engineering, Chang Cung University, Taoyuan, Taiwan, ROC;

    Department of Electronics Engineering, Feng Chia University, Taichung, Taiwan, ROC;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
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