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首页> 外文期刊>Microelectronics reliability >Oxide and interface trap densities estimation in ultrathin W/La_2O_3/Si MOS capacitors
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Oxide and interface trap densities estimation in ultrathin W/La_2O_3/Si MOS capacitors

机译：超薄W / La_2O_3 / Si MOS电容器中氧化物和界面陷阱密度的估计

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摘要

A novel interpretation for conductance spectra obtained by conductance method of La_2O_3 gated MOS capacitors has been proposed. Two distinct peaks, one with broad spectrum ranging from 10 k to 200 kHz and the other near 1 kHz with a single time constant spectrum, have been observed at depletion condition. The former spectrum can be assigned as the interface traps (D_it) located at the interface between La-silicate and the Si substrate by statistical surface potential fluctuation model. On the other hand, as the latter slow trap signal shows strong influence with the thickness of La-silicate layer, it can be assigned as the trappings (D_(slow)) at the interface between La_2O_3 and La-silicate. Finally, the D_(it) and D_(slow) trends on annealing temperature are summarized.
机译：提出了一种通过La_2O_3门控MOS电容器电导方法获得的电导谱的新颖解释。在耗尽条件下，观察到两个不同的峰，一个峰的光谱范围为10 k至200 kHz，另一个峰的光谱范围接近1 kHz，具有一个单一的时间常数谱。通过统计表面电势波动模型，可以将前一个光谱指定为位于La硅酸盐和Si衬底之间的界面的界面陷阱（D_it）。另一方面，由于后者的慢陷阱信号显示出对La硅酸盐层的厚度的强烈影响，因此可以将其指定为La_2O_3与La硅酸盐之间的界面处的陷阱（D_（slow））。最后，总结了退火温度的D_（it）和D_（慢）趋势。

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  • 来源
    《Microelectronics reliability》 |2012年第6期|p.1039-1042|共4页
  • 作者

    M. Mamatrishat; T. Kubota; T. Seki; K. Kakushima; P. Ahmet; K. Tsutsui; Y. Kataoka; A. Nishiyama; N. Sugii; K. Natori; T. Hattori; H. Iwai;

  • 作者单位

    Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;

    Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;

    Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;

    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;

    Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;

    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;

    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;

    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;

    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;

    Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;

    Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;

    Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
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