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Adhesion improvement of Cu-based substrate and epoxy molding compound interface by hierarchical structure preparation

机译：通过分层结构制备提高铜基基材和环氧模塑化合物界面的附着力

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摘要

For microelectronic industry, Cu-based substrate and epoxy molding compound (EMC) interface is inherently weak and most likely to delaminate, well-known as a major threat for integrated circuits (ICs) reliability. In this paper, hierarchical whisker-like oxide/Cu cone structure was for the first time to be fabricated by combining electroless plating with heat treatment methods to enhance the interface adhesion between Cu-based substrate and EMC. The surface morphology was characterized by scanning electron microscope (SEM). Result shows that the hierarchical whisker-like oxide/Cu cone film is fine, dense and uniform; Single Cu cone structure is about 3-5 μm in height and 1 urn in root diameter; a layer of whisker-like oxide grows perpendicularly to circular surface of Cu cone, with length ranging from tens to hundreds of nanometers. Adhesion strength between the as-prepared substrates and EMC were measured by button shear test. With consideration of oxidation caused by practical processes (e.g. wire bonding), the interface of EMC and porous oxide formed at 260 ℃ for 5 min was taken as standard sample, representative of practical interface. To further study the effect of whisker-like oxide and Cu cone solely on adhesion performance, whisker-like oxide, porous oxide/Cu cone were investigated as well. Button shear test results reveal that interfacial adhesion strength of EMC and whisker-like oxide, porous oxide/Cu cone, hierarchical whisker-like oxide/Cu cone are 85%, 110% and 162% higher than that of standard interface. Moreover, the mechanism for adhesion improvement was discussed by facture surface observation, failure path assumption and force-displacement curve analysis. Results show that interface of EMC and hierarchical whisker-like oxide/Cu cone exhibits brittle/ductile property with about 3-5 μm thick EMC left on the fracture surface, indicating cohesive failure caused by remarkable mechanical interlocking effect.
机译：对于微电子行业，铜基基板和环氧模塑化合物（EMC）界面固有地较弱，最容易分层，这是集成电路（IC）可靠性的主要威胁。本文首次通过化学镀与热处理相结合的方法来制造层状晶须状氧化物/ Cu锥状结构，以增强Cu基衬底与EMC之间的界面粘合性。通过扫描电子显微镜（SEM）表征表面形态。结果表明，层状晶须状氧化物/ Cu锥膜细密，致密，均匀。单铜锥结构的高度约为3-5μm，根部直径为1 um；一层晶须状的氧化物垂直于铜锥的圆形表面生长，长度范围从几十到几百纳米。通过纽扣剪切试验测量所制备的基材与EMC之间的粘合强度。考虑到实际工艺（例如引线键合）引起的氧化，将EMC和多孔氧化物在260℃下形成5分钟形成的界面作为标准样品，代表了实际界面。为了进一步研究晶须状氧化物和Cu锥对粘附性能的影响，还研究了晶须状氧化物，多孔氧化物/ Cu锥。纽扣剪切试验结果表明，EMC与晶须状氧化物，多孔氧化物/ Cu锥，分层晶须状氧化物/ Cu锥的界面粘合强度分别比标准界面高85％，110％和162％。此外，通过断裂表面观察，破坏路径假设和力-位移曲线分析，讨论了提高附着力的机理。结果表明，EMC和分层晶须状氧化物/ Cu锥的界面表现出脆性/延展性，断裂表面残留约3-5μm的EMC，表明由明显的机械互锁效应引起的内聚破坏。

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  • 来源
    《Microelectronics reliability》 |2012年第6期|p.1157-1164|共8页
  • 作者

    Wenjing Zhang; Wei Luo; Anmin Hu; Ming Li;

  • 作者单位

    State Key Laboratory of Metal Matrix Composites, Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China;

    State Key Laboratory of Metal Matrix Composites, Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China;

    State Key Laboratory of Metal Matrix Composites. Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China;

    State Key Laboratory of Metal Matrix Composites, Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
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