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Radiation hardened by design techniques to reduce single event transient pulse width based on the physical mechanism

机译:通过设计技术对辐射进行硬化处理,以减少基于物理机制的单事件瞬态脉冲宽度

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摘要

The impact of the source on single event transient (SET) is studied for the balanced two-transistor inverter by a novel simulation structure in a 90 nm twin-well bulk CMOS technology. Due to the significantly distinct mechanism of single event change collection in PMOS and NMOS, the source, which is beneficial to broadening P-hit SET pulse width (W_(SET)) but reducing N-hit W_(SET), plays a different role in SET production. Based on these different source roles, different radiation hardened by design (RHBD) methods are proposed to reduce W_(SET) for PMOS and NMOS, respectively. The simulation results show that the proposed RHBD methods can remarkably reduce W_(SET).
机译:通过采用90 nm双阱体CMOS技术的新型仿真结构,研究了平衡型两晶体管逆变器的信号源对单事件瞬变(SET)的影响。由于PMOS和NMOS中单个事件更改收集的明显不同的机制,该源在扩大P-hit SET脉冲宽度(W_(SET))但减小N-hit W_(SET)方面是有益的在SET生产中。基于这些不同的源角色,提出了不同的辐射硬化设计(RHBD)方法,分别降低了PMOS和NMOS的W_(SET)。仿真结果表明,所提出的RHBD方法可以显着降低W_(SET)。

著录项

  • 来源
    《Microelectronics reliability》 |2012年第6期|p.1227-1232|共6页
  • 作者单位

    School of Computer Science, National University of Defense Technology, Changsha 410073, China;

    School of Computer Science, National University of Defense Technology, Changsha 410073, China;

    School of Computer Science, National University of Defense Technology, Changsha 410073, China;

    School of Computer Science, National University of Defense Technology, Changsha 410073, China;

    School of Computer Science, National University of Defense Technology, Changsha 410073, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
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