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Effect of enhanced-mobility current path on the mobility of AOS TFT

机译：迁移率更高的电流路径对AOS TFT迁移率的影响

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摘要

In this study, the mobility enhancement in an Amorphous Oxide Semiconductor Thin Film Transistor (AOS TFT), particularly the effect of enhanced-mobility current path was investigated. In the TFT structure, the a-IGZO single active channel layer was replaced by double layers. Indium Tin Oxide (ITO) was employed as an enhanced-mobility current path material and was embedded in an amorphous Indium Gallium Zinc Oxide (a-IGZO) channel layer of a conventional bottom gate structure TFT. To analyze the effect of the length of an additional current path, the a-IGZO channel length was fixed at 80 urn, and the length of the ITO enhanced-mobility current path was increased to 20, 40, and 60 urn As a result, the mobility increased monotonically with the length of the enhanced-mobility current path and was predictable from the rule of mixture. The maximum saturation mobility of 28.3 cm~2/V s resulted when the length of the enhanced-mobility current path was 60 urn. This value is more than double that of a single path TFT. Such enhancement in mobility is attributed to the high conductivity of ITO and a good conduction band match between a-IGZO and ITO.
机译：在这项研究中，研究了非晶氧化物半导体薄膜晶体管（AOS TFT）中迁移率的提高，特别是迁移率提高的电流路径的影响。在TFT结构中，a-IGZO单有源沟道层被双层取代。氧化铟锡（ITO）被用作增强迁移率的电流路径材料，并被嵌入到常规底栅结构TFT的非晶铟镓锌氧化物（a-IGZO）沟道层中。为了分析附加电流路径的长度的影响，将a-IGZO通道长度固定为80微米，并将ITO增强迁移率电流路径的长度增加至20、40和60微米。迁移率随迁移率电流路径长度的增加而单调增加，并且可以根据混合规则进行预测。当增强迁移率电流路径的长度为60 um时，最大饱和迁移率达到28.3 cm〜2 / V s。该值是单路径TFT的两倍以上。迁移率的这种提高归因于ITO的高电导率以及a-IGZO和ITO之间的良好导带匹配。

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  • 来源
    《Microelectronics & Reliability》 |2012年第7期|p.1346-1349|共4页
  • 作者

    Myung Ju Kim; Duck-kyun Choi;

  • 作者单位

    Department of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 133-791, Republic of Korea;

    Department of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 133-791, Republic of Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
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