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Fabrication and electrical characteristics of Perylene-3,4,9,10-tetracarboxylic dianhydride/p-GaAs diode structure

机译:ylene-3,4,9,10-四羧酸二酐/ p-GaAs二极管结构的制备及电学特性

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摘要

This study aims to experimentally investigate whether Perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) organic layer at p-GaAs/Ag interface affects electrical transport across this interface or not. The electronic properties of metal-organic semiconductor-inorganic semiconductor structure between p type GaAs and PTCDA organic film have been investigated via current-voltage (I-V) and capacitance-voltage (C-V) methods. The Ag/PTCDA/p-GaAs contact exhibits a rectification behavior with the barrier height of 0.74 eV and ideality factor value of 3.42. Modification of the potential barrier of Ag/p-GaAs diode was achieved by using thin interlayer of the PTCDA organic material. This was attributed to the fact that the PTCDA organic interlayer increased the effective barrier height by influencing the space charge region of GaAs. The low and high frequency capacitance-voltage plots were used to determine the interface state density of the diode.
机译:这项研究旨在通过实验研究p-GaAs / Ag界面上的-3 3,4,9,10-四羧酸二酐(PTCDA)有机层是否会影响该界面上的电传输。通过电流-电压(I-V)和电容-电压(C-V)方法研究了p型GaAs和PTCDA有机膜之间的金属-有机半导体-无机半导体结构的电子性能。 Ag / PTCDA / p-GaAs接触表现出整流行为,势垒高度为0.74 eV,理想因子值为3.42。 Ag / p-GaAs二极管势垒的修改是通过使用PTCDA有机材料的薄中间层实现的。这归因于以下事实:PTCDA有机中间层通过影响GaAs的空间电荷区而增加了有效势垒高度。低频和高频电容-电压图用于确定二极管的界面状态密度。

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  • 来源
    《Microelectronics & Reliability》 |2012年第7期|p.1355-1361|共7页
  • 作者单位

    Department of Physics, Faculty of Sciences and Arts, Bingol University, Bingol, Turkey;

    Department of Physics, Faculty of Sciences and Arts, Firat University, Elazig, Turkey;

    Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo, Egypt;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
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