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Electrical characterization of inorganic-on-organic diode based InP and poly(3,4-ethylenedioxithiophene)/poly(styrenesulfonate) (PEDOT:PSS)

机译:无机/有机二极管基InP和聚(3,4-亚乙基二氧噻吩)/聚(苯乙烯磺酸盐)(PEDOT:PSS)的电学表征

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摘要

The electronic properties of metal-organic semiconductor-inorganic semiconductor diode between InP and poly(3,4-ethylenedioxithiophene)/poly(styrenesulfonate) (PEDOT:PSS) polymeric organic semiconductor film have been investigated via current-voltage and capacitance-voltage methods. The Al/PED-OT:PSS/p-InP contact exhibits a rectification behavior with the barrier height value of 0.98 eV and with the ideality factor value of 2.6 obtained from their forward bias current voltage (I-V) characteristics at the room temperature greater than the conventional Al/p-InP (0.83 eV, n - 1.13). This increase in barrier height and ideality factor can be attributed to PEDOT:PSS film formed at Al/p-InP interface.
机译:通过电流-电压和电容-电压方法研究了InP和聚(3,4-亚乙基二氧噻吩)/聚(苯乙烯磺酸盐)(PEDOT:PSS)聚合物有机半导体薄膜之间的金属-有机半导体-无机半导体二极管的电子性能。 Al / PED-OT:PSS / p-InP接触表现出整流行为,其势垒高度值为0.98 eV,并且根据其正向偏置电流电压(IV)特性在室温下获得的理想因子值为2.6。常规的Al / p-InP(0.83 eV,n-1.13)。势垒高度和理想因子的这种增加可归因于在Al / p-InP界面处形成的PEDOT:PSS膜。

著录项

  • 来源
    《Microelectronics & Reliability》 |2012年第7期|p.1350-1354|共5页
  • 作者单位

    Dicle University, Faculty of Sciences and Arts, Department of Physics, Diyarbakir, Turkey;

    Metallurgical and Materials Engineering Department, Firat University, Elazig, Turkey Department of Physics, College of Science, King Saud University, Riyadh, Saudi Arabia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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