Ionization coefficient of monolayer graphene nanoribbon

Mahdiar Ghadiry; Asrulnizam Bin Abd Manaf; Mahdieh Nadi; Meisam Rahmani; M.T. Ahmadi

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Ionization coefficient of monolayer graphene nanoribbon

机译：单层石墨烯纳米带的电离系数

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A semi-analytical model for impact ionization coefficient of graphene nanoribbon (CNR) is presented. The model is derived by calculating probability of electrons reaching ionization threshold energy E_r and the distance travelled by electron gaining E_r. In addition, ionization threshold energy is semi-analytically modelled for CNR. During modelling, we justify our assumptions using analytical modelling and comparison with simulation. Furthermore, it is shown that conventional silicon models are not valid for calculation of ionization coefficient of GNR. Finally, the profile of ionization is presented using the proposed models and the results are compared with that of silicon.

机译：建立了石墨烯纳米带（CNR）碰撞电离系数的半解析模型。该模型是通过计算电子达到电离阈值能量E_r的概率以及电子获得E_r所经过的距离而得出的。此外，对CNR的电离阈值能量进行了半解析建模。在建模过程中，我们使用分析建模以及与仿真的比较来证明我们的假设是正确的。此外，表明常规硅模型对于计算GNR的电离系数无效。最后，利用所提出的模型给出了电离曲线，并将结果与硅进行了比较。

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来源
《Microelectronics & Reliability》 |2012年第7期|p.1396-1400|共5页
作者
Mahdiar Ghadiry; Asrulnizam Bin Abd Manaf; Mahdieh Nadi; Meisam Rahmani; M.T. Ahmadi;
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作者单位

School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Penang, Malaysia;

School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Penang, Malaysia;

Department of Computer Engineering, Ashtian Branch, Islamic Azad University, Ashtian, Iran;

Faculty of Electrical Engineering, Universiti Teknologi Malaysia, Skudai, Malaysia;

Faculty of Electrical Engineering, Universiti Teknologi Malaysia, Skudai, Malaysia;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
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Ionization coefficient of monolayer graphene nanoribbon

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