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A novel power-clamp assisted complementary MOSFET for robust ESD protection

机译:新型功率钳位辅助互补MOSFET,可提供强大的ESD保护

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摘要

A novel power-damp assisted complementary MOSFET (PCACMOS), modified from traditional gate-coupled complementary MOSFET (GCCMOS), is proposed for high robust ESD (Electrostatic discharge) protection application. The power-clamp achieves by RC-NMOS and designs by Spice simulation. The comprehensive performance of the protection schemes are evaluated by the figure of merit (FOM). Compared with traditional gate-coupled MOSFET (GCCMOS) protection scheme, the power-clamp assisted complementary MOSFET (PCACMOS) protection scheme has a similar turn-on speed but higher FOM.
机译:针对传统的栅极耦合互补MOSFET(GCCMOS),提出了一种新型的功率阻尼辅助互补MOSFET(PCACMOS),用于高鲁棒性ESD(静电放电)保护应用。功率钳由RC-NMOS实现,并由Spice仿真设计。保护方案的综合性能由品质因数(FOM)评估。与传统的栅极耦合MOSFET(GCCMOS)保护方案相比,功率钳位辅助互补MOSFET(PCACMOS)保护方案具有相似的导通速度,但FOM更高。

著录项

  • 来源
    《Microelectronics & Reliability》 |2012年第8期|p.1593-1597|共5页
  • 作者单位

    ESD Lab, Department of Information Science and Electronics Engineering, Zhejiang University, Hangzhou, China;

    ESD Lab, Department of Information Science and Electronics Engineering, Zhejiang University, Hangzhou, China;

    ESD Lab, Department of Information Science and Electronics Engineering, Zhejiang University, Hangzhou, China;

    ESD Lab, Department of Information Science and Electronics Engineering, Zhejiang University, Hangzhou, China;

    ESD Lab, Department of Information Science and Electronics Engineering, Zhejiang University, Hangzhou, China;

    ESD Lab, Department of Information Science and Electronics Engineering, Zhejiang University, Hangzhou, China;

    ESD Lab, Department of Information Science and Electronics Engineering, Zhejiang University, Hangzhou, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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