Immunity against temperature variability and bias point invariability in double gate tunnel field effect transistor

Rakhi Narang; Manoj Saxena; R.S. Gupta; Mridula Gupta

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Immunity against temperature variability and bias point invariability in double gate tunnel field effect transistor

机译：双栅隧道场效应晶体管的抗温度变化性和偏置点不变性

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The weak dependence of the Tunnel Field Effect Transistor (TFET) device characteristics on temperature provides an edge over the conventional MOSFETs in terms of its reliable operation over a wide temperature range applications. This study focusses on the analog/RF performance comparison of DG-TFET and DG-MOSFET, and the impact of temperature variations on some of the key parameters like VIP_3 and intrinsic device gain (g_m * R_(out)) and the variation of the optimum bias point. In the study of linearity and analog performance, g_(m3) (third order derivative of I_(ds) - V_(ds), VIP_3 in conjunction with intrinsic gain are considered to select the optimum bias point to achieve high gain and better linearity performance. The impact of temperature variations on the ambipolar behavior of a TFET has also been studied.

机译：隧道场效应晶体管（TFET）器件特性对温度的依赖性较弱，就其在较宽的温度范围应用中的可靠运行而言，它比常规MOSFET具有优势。这项研究的重点是DG-TFET和DG-MOSFET的模拟/ RF性能比较，以及温度变化对一些关键参数的影响，例如VIP_3和固有器件增益（g_m * R_（out））以及最佳偏置点。在线性和模拟性能研究中，考虑使用g_（m3）（I_（ds）-V_（ds），VIP_3与本征增益的三阶导数）来选择最佳偏置点，以实现高增益和更好的线性性能还研究了温度变化对TFET双极性行为的影响。

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来源
《Microelectronics & Reliability》 |2012年第8期|p.1617-1620|共4页
作者
Rakhi Narang; Manoj Saxena; R.S. Gupta; Mridula Gupta;
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作者单位

Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi 110 021, India;

Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi, Karampura, New Delhi 110 015, India;

Department of Electronics and Communication Engineering, Maharaja Agrasen Institute of Technology, Sector-22. Rohini, Delhi 110 086, India;

Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi 110 021, India;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
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Immunity against temperature variability and bias point invariability in double gate tunnel field effect transistor

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