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Degradation behaviors of GaN light-emitting diodes under high-temperature and high-current stressing

机译：高温大电流应力下GaN发光二极管的降解行为

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摘要

A number of commercially available multiple-quantum well (MQW) InCaN/GaN blue LEDs with wavelengths of about 460 nm and a power of 1 mW were stressed at temperatures ranging from 25 to 120 ℃ at several accelerated DC currents. Both the forward and reverse current voltage characteristics as well as the electroluminescent spectra of the LEDs were monitored. These effects also resulted in the pronounced degradation of light efficiency and device operation lifetime. We found that the degradation of photonic characteristics, correlated very well with the generation-recombination current which is governed by the defect density. The device degradation is much faster at high temperatures. At nominal operation current and at room temperature, the light intensity degradation reaches a saturation level before the light dyes out. These results shed new lights upon the design and lifetime specifications for the emerging commercial solid-state lighting devices.
机译：在25至120℃的温度范围内，在数种加速DC电流下，对许多波长约为460 nm，功率为1 mW的市售多量子阱（MQW）InCaN / GaN蓝色LED施加了应力。监控正向和反向电流电压特性以及LED的电致发光光谱。这些影响还导致光效率和器件工作寿命显着下降。我们发现，光子特性的退化与由缺陷密度控制的产生复合电流非常相关。高温下器件的降解要快得多。在标称工作电流和室温下，光强度下降达到饱和水平，然后将光染色掉。这些结果为新兴的商用固态照明设备的设计和使用寿命规格提供了新的思路。

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  • 来源
    《Microelectronics & Reliability》 |2012年第8期|p.1636-1639|共4页
  • 作者

    J. Liu; H. Wong; S.L. Siu; C.W. Kok; V. Filip;

  • 作者单位

    Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong;

    Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong;

    Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong;

    Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong;

    Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, University of Bucharest, Faculty of Physics, 405 Atomistilor Str., Bucharest-Magurele 077125, P.O. Box MC-U, Romania;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
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