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Performance and reliability testing of modern IGBT devices under typical operating conditions of aeronautic applications

机译：现代IGBT器件在航空应用典型运行条件下的性能和可靠性测试

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As for railway traction applications, aeronautical power electronics implies high power density handling. Moreover typical aeronautical applications impose a harsh thermal environment. SiC technology has recently emerged for high power and high temperature application, but is not yet mature enough. Consequently it is still important to push the silicon devices temperature limits in order to increase the amount of switched power. Device ageing is accelerated and there exists the risk of catastrophic failure by thermal runaway. In order to design correctly high temperature power systems, knowing the IGBT characteristics at extended temperature ranges becomes essential. This paper describes an experimental setup and test procedure conceived to experiment with different available IGBT technologies at temperatures beyond the limits rated by manufacturers (-55 ℃, +175 ℃). The aim is to characterize the devices for a better understanding and optimized safe application. This will ease prototyping for future development of IGBT modules in aircraft.
机译：对于铁路牵引应用，航空电力电子设备意味着高功率密度处理。而且，典型的航空应用施加了恶劣的热环境。 SiC技术最近出现在高功率和高温应用中，但还不够成熟。因此，推动硅器件的温度极限以增加开关功率的数量仍然很重要。加速设备老化，存在因热失控而导致灾难性故障的风险。为了正确设计高温电源系统，了解扩展温度范围内的IGBT特性变得至关重要。本文介绍了一种实验设置和测试程序，旨在在超出制造商额定极限（-55℃，+ 175℃）的温度下使用各种可用的IGBT技术进行实验。目的是表征设备，以更好地理解和优化安全应用。这将简化飞机上IGBT模块未来开发的原型。

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