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Determination of self-heating and thermal resistance in polycrystalline and bulk silicon resistors by DC measurements

机译:通过直流测量确定多晶硅和体硅电阻器的自热和热阻

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摘要

Self-heating of silicon resistors (fabricated in polycrystalline and bulk silicon) which are used as passive devices in analog circuits and as ESD-Protection elements is characterised in this work by purely DC measurements. A methodology using the device simultaneously as heater and temperature sensor is presented. Extraction of thermal resistance is derived and discussed. Different types of resistors including a wide range of different geometries are characterised, the geometry dependence of the thermal resistance is determined for different resistor types. Theoretical models describing geometry dependence for thermal resistance are in very good agreement with the presented results.
机译:这项工作通过纯直流测量来表征硅电阻器(由多晶硅和块状硅制成)的自热,该电阻器用作模拟电路中的无源器件和ESD保护元件。提出了同时使用该设备作为加热器和温度传感器的方法。导出并讨论了热阻的提取。表征了包括各种不同几何形状的不同类型的电阻器,针对不同电阻器类型确定了热阻的几何形状依赖性。描述几何形状对热阻的依赖性的理论模型与给出的结果非常吻合。

著录项

  • 来源
    《Microelectronics & Reliability》 |2005年第8期|p.1187-1193|共7页
  • 作者

    Martin Sauter;

  • 作者单位

    Department of Electrical Engineering and Computer Science, University of the Federal Armed Forces Munich, FB ETTI 1, Werner-Heisenberg Weg 39, D-85 577 Neubiberg, Germany;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 一般性问题;
  • 关键词

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